Field effect transistor and fabrication method thereof

A method for fabricating a field effect transistor, comprising:

• providing a substrate having a transistor forming region thereon;
• forming an insulating layer on the substrate;
• forming a first graphene layer on the insulating layer within the transistor forming region;
• forming an etch stop layer on the first graphene layer within the transistor forming region;
• forming a first inter-layer dielectric layer on the etch stop layer;
• forming a gate trench recessed into the first inter-layer dielectric layer and the etch stop layer within the transistor forming region;
• forming a second graphene layer on interior surface of the gate trench;
• forming a gate dielectric layer on the second graphene layer and on the first inter-layer dielectric layer;
• and
• forming a gate electrode on the gate dielectric layer within the gate trench.