Semiconductor device and manufacturing method thereof
AssigneePowerchip Semiconductor Manufacturing Corporation
InventorsLing Yen Yeh, Shih-Ci Yen, Hiroshi Yoshida
Life of this patent
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Abstract
A semiconductor device includes a substrate, a dielectric layer over the substrate, an oxide semiconductor layer disposed on the dielectric layer, a gate electrode, a gate insulating layer, a protection layer, and a plurality of source/drain electrode layers. The gate insulating layer is formed over a surface of the oxide semiconductor layer. The gate electrode is formed over a surface of the gate insulating layer. The protection layer is formed extending from an edge of the gate insulating layer along the surface of the oxide semiconductor layer. The source/drain electrode layers are disposed on the oxide semiconductor layer and the protection layer at two sides of the gate electrode.
Claims16
A semiconductor device, comprising:
- a substrate;
- a dielectric layer disposed over the substrate;
- an oxide semiconductor layer disposed on the dielectric layer;
- a gate insulating layer formed over a surface of the oxide semiconductor layer;
- a gate electrode formed over a surface of the gate insulating layer;
- a protection layer formed extending from an edge of the gate insulating layer along the surface of the oxide semiconductor layer;
- and
- a plurality of source/drain electrode layers disposed on the oxide semiconductor layer and the protection layer at two sides of the gate electrode.
A manufacturing method of a semiconductor device, comprising:
- forming a dielectric layer over a substrate;
- forming an oxide semiconductor layer over the dielectric layer;
- forming a protection layer on a portion of the oxide semiconductor layer;
- forming a metal layer on the oxide semiconductor layer and the protection layer;
- forming an interlayer dielectric layer on the metal layer;
- forming a trench in the interlayer dielectric layer, the metal layer and a top of the protection layer by a plasma etching;
- removing residue of the protection layer under the trench by a wet etching until a surface of the oxide semiconductor layer is exposed;
- forming a gate insulating layer on the surface of the oxide semiconductor layer;
- and
- forming a gate electrode on the gate insulating layer.
Dependencies are inferred from the claim text.