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US 12,230,509 B2Granted
Method for fabricating semiconductor device
AssigneeUnited Microelectronics Corp.
InventorsMing Thai Chai, Meng Xie, Wenbo Ding
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Abstract
A method for fabricating a semiconductor device includes the steps of: forming a gate structure on a substrate; forming a source/drain region adjacent to the gate structure; performing a first cleaning process; performing a first rapid thermal anneal (RTA) process to remove oxygen cluster in the substrate; forming a metal layer on the source/drain region; and performing a second RTA process to transform the metal layer into a silicide layer.
Claims7
A method for fabricating a semiconductor device:
- forming a gate structure on a substrate, wherein the substrate comprises a trap rich layer having oxygen clusters;
- forming a source/drain region adjacent to the gate structure;
- performing a first cleaning process;
- performing a first rapid thermal anneal (RTA) process to remove oxygen clusters in the trap rich layer of the substrate after forming the source/drain region, wherein the first RTA process is between 560° C. to 700° C.;
- forming a metal layer on the source/drain region;
- and
- transforming the metal layer into a silicide layer.
4 more elements
Dependencies are inferred from the claim text.