H10D 30/0277
Forming conductor-insulator-semiconductor or schottky barrier source or drain regions
Official title: {forming conductor-insulator-semiconductor or Schottky barrier source or drain regions}
H10D30/0277 (Forming conductor-insulator-semiconductor or schottky barrier source or drain regions) appears on 179 US grants and 214 published applications in this corpus.
Search patents in H10D- Granted patents
- 179
- Published applications
- 214
- Assignees
- 97
- Inventors
- 334
- Latest grant
- 8 Oct 2024
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 2 | 0 |
| 1988 | 2 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 3 | 0 |
| 1999 | 2 | 0 |
| 2000 | 2 | 0 |
| 2001 | 4 | 4 |
| 2002 | 4 | 4 |
| 2003 | 4 | 9 |
| 2004 | 9 | 9 |
| 2005 | 3 | 17 |
| 2006 | 6 | 14 |
| 2007 | 11 | 23 |
| 2008 | 6 | 11 |
| 2009 | 8 | 7 |
| 2010 | 11 | 10 |
| 2011 | 13 | 14 |
| 2012 | 2 | 12 |
| 2013 | 7 | 10 |
| 2014 | 9 | 8 |
| 2015 | 5 | 6 |
| 2016 | 9 | 13 |
| 2017 | 12 | 7 |
| 2018 | 11 | 9 |
| 2019 | 3 | 3 |
| 2020 | 6 | 10 |
| 2021 | 7 | 4 |
| 2022 | 6 | 6 |
| 2023 | 3 | 2 |
| 2024 | 2 | 1 |
| 2025 | 0 | 0 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Semiconductor device, solid-state imaging device, and method for manufacturing semiconductor device30 Jan 2024US 11,888,020 B2Sony Semiconductor Solutions Corporation
- MIS contact structure with metal oxide conductor12 Dec 2023US 11,843,040 B2Acorn Semi, LLC
- Field effect transistor and method for manufacturing the same10 Oct 2023US 11,784,232 B2Nippon Telegraph and Telephone Corporation
- MOSFET transistors with hybrid contact9 May 2023US 11,646,371 B2Amplexia, LLC
- Semiconductor device with reverse current protection2 Apr 2026US 2026/0096159 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Mis contact structure with metal oxide conductor29 Feb 2024US 2024/0072150 A1Acorn Semi, LLC
- Mis contact structure with metal oxide conductor5 Oct 2023US 2023/0317814 A9Acorn Semi, LLC
- Ldmos with self-aligned body and hybrid source23 Feb 2023US 2023/0054381 A1Amplexia, LLC
- Nitride semiconductor device and method for manufacturing same15 Sep 2022US 2022/0293757 A1Rohm Co., Ltd.
Most cited
By later US patents
- Diffusionless conductor/oxide semiconductor field effect transistor and methods for making and using the same255US 5,162,879 ATexas Instruments Incorporated · 1992
- MOS transistor with assisted-gates and ultra-shallow “Psuedo” source and drain extensions for ultra-large-scale integration245US 6,312,995 B1Advanced Micro Devices, Inc. · 2001
- Formation of sidewall oxide layers by reactive oxygen ion etching to define submicron features205US 4,432,132 ABell Telephone Laboratories, Incorporated · 1984
- Transistor with workfunction-induced charge layer159US 6,891,234 B1Acorn Technologies, Inc. · 2005
- Field effect transistor and manufacturing method thereof123US 7,119,402 B2Kabushiki Kaisha Toshiba · 2006