Transistor with workfunction-induced charge layer
AssigneeAcorn Technologies, Inc.
InventorsDaniel J. Connelly, Carl Faulkner, Daniel E. Grupp
Life of this patent
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Abstract
An electrical switching device includes a semiconductor having a channel therein which is proximate to at least on channel tap in an extension region and also to a gate. A conductor (e.g., a metal) is disposed proximate to the extension region but is electrically isolated from both the extension region and the gate (e.g., through the use of one or more insulators). The conductor has a workfunction outside of the bandgap of a semiconductor in the extension region and therefore includes a layer of charge in the extension region. The magnitude and polarity of this layer of charge is controlled through selection of the metal, the semiconductor, and the insulator.
Claims41
A transistor, comprising a layer of induced charge in a conduction path between a semiconductor channel and a channel tap, the conduction path being proximate to a conductor locally insulated from the layer of induced charge, which conductor is further insulated from a gate of the transistor and possesses a workfunction outside of a bandgap of a semiconductor in a region of the transistor in which the charge is induced.
A method, comprising inducing a layer of charge in a conduction path of a transistor between a semiconductor channel and a channel tap, the conduction path being proximate to a conductor locally insulated from the layer of induced charge and from a gate of the transistor, the conductor possessing a workfunction outside of a bandgap of a semiconductor in a region of the transistor in which the charge is induced.
Dependencies are inferred from the claim text.