Semiconductor device, solid-state imaging device, and method for manufacturing semiconductor device

A solid-state imaging device comprising:

• a pixel part in which pixels each having a photoelectric conversion part are arranged two-dimensionally;
• and
• an analog-to-digital (AD) conversion part that converts analog signals from a plurality of the pixels into digital signals,
• the solid-state imaging device having a laminated structure in which
• a plurality of the pixels and the AD conversion part are formed on a semiconductor layer, and
• a compound layer formed on a surface of the semiconductor layer and formed by the semiconductor layer reacting with metal,
• an insulating film layer in contact with the compound layer, and
• an electrode layer formed on the insulating film layer
• are laminated.

A method for manufacturing a semiconductor device, the method comprising:

• forming an electrode layer on an insulating film layer;
• and
• forming a compound layer, formed by a semiconductor layer reacting with metal, on a surface of the semiconductor layer so as to come into contact with the insulating film layer,
• forming a field-effect transistor including silicide in the semiconductor layer with the electrode layer as a gate electrode;
• and
• forming the compound layer by diffusing the silicide by electromigration.