Cyclical epitaxial deposition and etch
AssigneeASM America, Inc.
InventorsMatthias Bauer, Shawn G. Thomas
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Abstract
Methods for selectively depositing high quality epitaxial material include introducing pulses of a silicon-source containing vapor while maintaining a continuous etchant flow. Epitaxial material is deposited on areas of a substrate, such as source and drain recesses. Between pulses, the etchant flow continues such that lower quality epitaxial material may be removed, as well as any non-epitaxial material that may have been deposited. The pulse of silicon-source containing vapor may be repeated until a desired thickness of epitaxial material is selectively achieved in semiconductor windows, such as recessed source/drain regions.
Claims15
A method for selectively forming silicon-containing material in a recess, comprising:
- providing a substrate, the substrate including a recess and insulating surfaces;
- introducing a pulse of a silicon-containing source vapor to deposit silicon-containing material in the recess;
- introducing a continuous etchant flow of one or more vapor-phase etchants to remove portions of the deposited silicon-containing material from the recess;
- and
- under isobaric conditions, repeating pulses of the silicon-containing source vapor during the continuous etchant flow to selectively form the silicon-containing material in the recess.
Dependencies are inferred from the claim text.