Semiconductor device with cap element
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShing-Huang Wu, Jian-Shian Chen
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Abstract
A semiconductor device structure is provided. The semiconductor device structure includes an epitaxial structure over a substrate and a cap element over the epitaxial structure. The cap element has a first thickness measured between a top surface of the cap element and a top surface of the epitaxial structure. The cap element has a second thickness measured between a side surface of the cap element and a side surface of the epitaxial structure. The first thickness and the second thickness are different from each other.
Claims20
A semiconductor device structure, comprising:
- an epitaxial structure over a substrate;
- and
- a cap element over the epitaxial structure, wherein:
- the cap element has a first thickness measured between a top surface of the cap element and a top surface of the epitaxial structure,
- the cap element has a second thickness measured between a side surface of the cap element and a side surface of the epitaxial structure, and
- the first thickness and the second thickness are different from each other.
A semiconductor device structure, comprising:
- a first epitaxial structure over a substrate;
- a first cap element over the first epitaxial structure, wherein the first epitaxial structure is a portion of a first transistor;
- a second epitaxial structure laterally spaced apart from the first epitaxial structure;
- and
- a second cap element over the second epitaxial structure, wherein the second epitaxial structure is a portion of a second transistor, wherein a shortest distance between the cap element and the second cap element is smaller than a width of a top surface of the first cap element.
A semiconductor device structure, comprising:
- a first epitaxial structure over a substrate;
- a first cap element over the first epitaxial structure;
- a first metal-semiconductor compound structure on the first cap element;
- a second epitaxial structure laterally spaced apart from the first epitaxial structure;
- a second cap element over the second epitaxial structure;
- and
- a second metal-semiconductor compound structure on the second cap element, wherein a shortest distance between the first metal-semiconductor compound structure and the second metal-semiconductor compound structure is smaller than a width of a top surface of the first cap element.
Dependencies are inferred from the claim text.