H10D 30/0278
Forming single crystalline channels on wafers after forming insulating device isolations
Official title: {forming single crystalline channels on wafers after forming insulating device isolations}
H10D30/0278 (Forming single crystalline channels on wafers after forming insulating device isolations) appears on 484 US grants and 487 published applications in this corpus.
Search patents in H10D- Granted patents
- 484
- Published applications
- 487
- Assignees
- 119
- Inventors
- 806
- Latest grant
- 10 Mar 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 2 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 5 | 0 |
| 1995 | 5 | 0 |
| 1996 | 4 | 0 |
| 1997 | 4 | 0 |
| 1998 | 4 | 0 |
| 1999 | 15 | 0 |
| 2000 | 15 | 0 |
| 2001 | 10 | 5 |
| 2002 | 14 | 14 |
| 2003 | 17 | 21 |
| 2004 | 12 | 17 |
| 2005 | 9 | 25 |
| 2006 | 20 | 17 |
| 2007 | 11 | 18 |
| 2008 | 10 | 28 |
| 2009 | 15 | 15 |
| 2010 | 15 | 28 |
| 2011 | 18 | 31 |
| 2012 | 19 | 39 |
| 2013 | 34 | 43 |
| 2014 | 46 | 37 |
| 2015 | 39 | 44 |
| 2016 | 36 | 34 |
| 2017 | 30 | 14 |
| 2018 | 19 | 13 |
| 2019 | 12 | 8 |
| 2020 | 8 | 9 |
| 2021 | 6 | 3 |
| 2022 | 4 | 6 |
| 2023 | 7 | 10 |
| 2024 | 5 | 6 |
| 2025 | 4 | 1 |
| 2026 | 2 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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Most cited
By later US patents
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- Strained transistor integration for CMOS344US 7,662,689 B2Intel Corporation · 2010
- Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same284US 6,831,292 B2AmberWave Systems Corporation · 2004
- Transistor in a semiconductor device and method of manufacturing the same201US 6,406,973 B1Hyundai Electronics Industries Co., Ltd. · 2002