Gate dielectric for thin film oxide transistors

An integrated circuit comprising:

• a gate electrode;
• a first layer on top of the gate electrode, the first layer comprising a metal and oxygen, wherein hydrogen is built up at an interface between the gate electrode and the first layer;
• a second layer on top of the first layer, the second layer comprising a dielectric including zirconium and oxygen, wherein the second layer is crystalline;
• a third layer on top of and in contact with the second layer, the third layer comprising a semiconductor material;
• and
• a fourth layer over the third layer, the fourth layer including an insulator, a source contact, and a drain contact.

An integrated circuit, comprising:

• a gate electrode;
• a first layer comprising a semiconductor material;
• a second layer between the first layer and the gate electrode, and in contact with the first layer, the second layer comprising a crystalline high-k dielectric material, wherein hydrogen is stacked up at an interface between the gate electrode and the second layer;
• a first contact coupled to the first layer at a first location;
• and
• a second contact coupled to the first layer at a second location.