G03F 1/00
Originals for photomechanical production of textured or patterned surfaces
Official title: Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
G03F1/00 (Originals for photomechanical production of textured or patterned surfaces) appears on 12,191 US grants and 12,136 published applications in this corpus.
Search patents in G03F- Granted patents
- 12,191
- Published applications
- 12,136
- Assignees
- 1,571
- Inventors
- 15,463
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 18 | 0 |
| 1977 | 19 | 0 |
| 1978 | 30 | 0 |
| 1979 | 21 | 0 |
| 1980 | 22 | 0 |
| 1981 | 41 | 0 |
| 1982 | 30 | 0 |
| 1983 | 43 | 0 |
| 1984 | 35 | 0 |
| 1985 | 46 | 0 |
| 1986 | 57 | 0 |
| 1987 | 43 | 0 |
| 1988 | 48 | 0 |
| 1989 | 49 | 0 |
| 1990 | 61 | 0 |
| 1991 | 53 | 0 |
| 1992 | 61 | 0 |
| 1993 | 90 | 0 |
| 1994 | 118 | 0 |
| 1995 | 128 | 0 |
| 1996 | 150 | 0 |
| 1997 | 141 | 0 |
| 1998 | 213 | 0 |
| 1999 | 231 | 0 |
| 2000 | 217 | 0 |
| 2001 | 240 | 117 |
| 2002 | 329 | 417 |
| 2003 | 396 | 502 |
| 2004 | 383 | 548 |
| 2005 | 326 | 606 |
| 2006 | 433 | 563 |
| 2007 | 305 | 520 |
| 2008 | 360 | 580 |
| 2009 | 403 | 540 |
| 2010 | 557 | 488 |
| 2011 | 508 | 416 |
| 2012 | 456 | 437 |
| 2013 | 469 | 475 |
| 2014 | 485 | 453 |
| 2015 | 422 | 466 |
| 2016 | 443 | 419 |
| 2017 | 411 | 394 |
| 2018 | 354 | 415 |
| 2019 | 383 | 439 |
| 2020 | 452 | 503 |
| 2021 | 413 | 483 |
| 2022 | 376 | 537 |
| 2023 | 390 | 572 |
| 2024 | 373 | 506 |
| 2025 | 342 | 419 |
| 2026 | 217 | 321 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- G03F 1/68Preparation processes not covered by groups g03f1/20 - g03f1/504,900
- G03F 1/36Masks having proximity correction features2,653
- G03F 1/26Phase shift masks [psm]2,200
- G03F 1/22Masks or mask blanks for imaging by radiation of 100nm or shorter1,799
- G03F 1/38Masks having auxiliary features1,755
- G03F 1/50Mask blanks not covered by g03f1/20 - g03f1/341,053
- G03F 1/62Pellicles929
- G03F 1/54Absorbers903
All 15 subgroupsShow fewer
- G03F 1/20Masks or mask blanks for imaging by charged particle beam [cpb] radiation458
- G03F 1/60Substrates319
- G03F 1/66Containers specially adapted for masks, mask blanks or pellicles288
- G03F 1/52Reflectors144
- G03F 1/90Prepared by montage processes56
- G03F 1/88Prepared by photographic processes for production of originals simulating relief14
- G03F 1/92Prepared from printing surfaces10
Recent patents
- Method for electron beam-induced processing of a defect of a microlithographic photomask6 Oct 2026US 12,754,470 B2Carl Zeiss SMT GmbH
- Mask optimization for layer accounting for overlap with other layers6 Oct 2026US 12,754,471 B2D2S, Inc.
- Mask optimization for layer based on comparison of components in layer to components in other layers6 Oct 2026US 12,754,472 B2D2S, Inc.
- Mask optimization preferentially accounting for overlap regions6 Oct 2026US 12,754,473 B2D2S, Inc.
- Concurrent mask optimization for multiple layers6 Oct 2026US 12,754,474 B2D2S, Inc.
- Euv photomask and manufacturing method thereof8 Oct 2026US 2026/0310060 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Reflective mask blank, refelctive mask, and method for producing reflective mask8 Oct 2026US 2026/0310061 A1AGC Inc.
- Method of and device for generating layout diagram8 Oct 2026US 2026/0310062 A1Taiwan Semiconductor Manufacturing Company.Ltd
- System and method for 3d mask model based on huygens-fresnel principle8 Oct 2026US 2026/0310063 A1Samsung Electronics Co., Ltd.
- Kernel function generation method, optical proximity correction method using the kernel function, and mask manufacturing method including the optical proximity correction method8 Oct 2026US 2026/0310064 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Cut-mask patterning process for fin-like field effect transistor (FinFET) device3,286US 9,236,267 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- System and methods for converting planar design to FinFET design1,326US 8,816,444 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Method of forming metal oxide hardmask544US 8,901,016 B2ASM Japan K .K. · 2014
- Semiconductor substrate process using an optically writable carbon-containing mask539US 7,429,532 B2APPLIED Materials.Inc. · 2008
- Method of forming metal oxide hardmask534US 9,171,716 B2ASM Japan K .K. · 2015