US 2026/0310060 A1 · EUV PHOTOMASK AND MANUFACTURING METHOD THEREOF

Abstract

A method of manufacturing an extreme ultraviolet mask includes forming a reflective multilayer stack, a capping layer, an absorber layer, and a hard mask layer over a substrate in sequence. A photoresist layer is formed over the hard mask layer, and the photoresist layer is patterned. The hard mask layer is etched to form a hard mask. The absorber layer is etched to form a patterned absorber layer. The patterned photoresist layer and the hard mask are removed. A first plasma treatment is performed using a plasma formed from a mixture of oxygen and water. The plasma is purged using a mixture of H2 and an inert gas. A second plasma treatment is performed using a plasma formed from a mixture of H2 and an inert gas; and a wet cleaning operation is performed.

Claims19

Dependent claims

A method of manufacturing an extreme ultraviolet mask, comprising:

forming a reflective multilayer stack, a capping layer, an absorber layer, and a hard mask layer over a substrate in sequence;
forming a photoresist layer over the hard mask layer;
patterning the photoresist layer;
etching the hard mask layer to form a hard mask;
etching the absorber layer to form a patterned absorber layer;
removing the patterned photoresist layer and the hard mask;
performing a first plasma treatment using a plasma formed from a mixture of oxygen and water;
purging the plasma using a mixture of H2 and an inert gas;
performing a second plasma treatment using a plasma formed from a mixture of H2 and an inert gas;
and
performing a wet cleaning operation.

8 more elements

Dependencies are inferred from the claim text.

Euv photomask and manufacturing method thereof

Life of this patent

Euv photomask and manufacturing method thereof

Life of this patent

Abstract

Claims19