G03F 1/38
Masks having auxiliary features
Official title: Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
G03F1/38 (Masks having auxiliary features) appears on 1,755 US grants and 2,013 published applications in this corpus.
Search patents in G03F- Granted patents
- 1,755
- Published applications
- 2,013
- Assignees
- 426
- Inventors
- 3,540
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 2 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 2 | 0 |
| 1983 | 5 | 0 |
| 1984 | 5 | 0 |
| 1985 | 4 | 0 |
| 1986 | 5 | 0 |
| 1987 | 4 | 0 |
| 1988 | 7 | 0 |
| 1989 | 2 | 0 |
| 1990 | 4 | 0 |
| 1991 | 2 | 0 |
| 1992 | 5 | 0 |
| 1993 | 3 | 0 |
| 1994 | 5 | 0 |
| 1995 | 10 | 0 |
| 1996 | 7 | 0 |
| 1997 | 13 | 0 |
| 1998 | 19 | 0 |
| 1999 | 13 | 0 |
| 2000 | 19 | 0 |
| 2001 | 17 | 8 |
| 2002 | 21 | 29 |
| 2003 | 31 | 54 |
| 2004 | 42 | 46 |
| 2005 | 34 | 64 |
| 2006 | 39 | 61 |
| 2007 | 36 | 56 |
| 2008 | 40 | 60 |
| 2009 | 39 | 62 |
| 2010 | 59 | 56 |
| 2011 | 54 | 50 |
| 2012 | 43 | 69 |
| 2013 | 52 | 93 |
| 2014 | 80 | 81 |
| 2015 | 91 | 107 |
| 2016 | 105 | 82 |
| 2017 | 93 | 78 |
| 2018 | 82 | 96 |
| 2019 | 78 | 118 |
| 2020 | 113 | 116 |
| 2021 | 97 | 125 |
| 2022 | 100 | 118 |
| 2023 | 77 | 122 |
| 2024 | 97 | 127 |
| 2025 | 59 | 78 |
| 2026 | 36 | 57 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method for correcting lithography pattern of surface plasma22 Sep 2026US 12,743,017 B2Institute of Microelectronics, Chinese Academy of Sciences
- Reticle-like sensing assembly22 Sep 2026US 12,743,018 B2Microprogram Information Co., Ltd.
- Process method for improving SRAM operating speed15 Sep 2026US 12,740,038 B2Shanghai Huali Integrated Circuit Corporation
- Photomask including line pattern monitoring mark and method of manufacturing integrated circuit device using the same18 Aug 2026US 12,710,693 B2Samsung Electronics Co., Ltd.
- Substrate for mask blanks and method for manufacturing the same11 Aug 2026US 12,704,776 B2Shin-Etsu Chemical Co., Ltd.
- Reflective mask blank, reflective mask, reflective mask blank producing method, and reflective mask producing method8 Oct 2026US 2026/0310066 A1AGC Inc.
- Reflective photomask and method for manufacturing reflective photomask1 Oct 2026US 2026/0299398 A1Rapidus Corporation
- Photomask and method of manufacturing or repairing photomask1 Oct 2026US 2026/0299399 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Reticle layout with plasma-etch wafer dicing1 Oct 2026US 2026/0305210 A1
- Structure and method for surface plasmon lithography imaging, and computer-readable medium17 Sep 2026US 2026/0277112 A1Institute of Microelectronics, Chinese Academy of Sciences
Most cited
By later US patents
- Cut-mask patterning process for fin-like field effect transistor (FinFET) device3,286US 9,236,267 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Extreme ultraviolet lithography process and mask331US 8,841,047 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Reflective mask and method of making same330US 8,877,409 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Semiconductor device manufacturing method265US 6,703,328 B2Renesas Technology Corp. · 2004
- Scattering bar OPC application method for mask ESD prevention164US 7,614,030 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2009