Reflective mask and method of making same

An extreme ultraviolet (EUV) mask, the EUV mask comprising:

• a low thermal expansion material (LTEM) substrate;
• a conductive layer deposited on a first surface of the LTEM substrate;
• a stack of reflective multilayers (ML) deposited on a second surface of the LTEM substrate;
• a capping layer deposited on the stack of reflective ML;
• a first absorption layer deposited on the capping layer;
• a main pattern and a border ditch, wherein the border ditch crosses the capping layer and partially enters the stack of the reflective ML;
• a second absorption layer deposited in the border ditch;
• a protection layer disposed in the border ditch directly on the second absorption layer, wherein the protection layer does not cover the main pattern.

A mask comprising:

• a substrate;
• a stack of reflective multilayers (ML) deposited on the substrate;
• a capping layer deposited on the stack of reflective ML;
• a first absorption layer deposited on the capping layer;
• a main pattern and a border ditch, wherein the border ditch reaches to the capping layer;
• a second absorption layer in the border ditch;
• and
• a protection layer disposed in the border ditch over the second absorption layer, wherein the protection layer does not cover the main pattern.