G03F 1/40
Electrostatic discharge [esd] related features
Official title: Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
G03F1/40 (Electrostatic discharge [esd] related features) appears on 102 US grants and 106 published applications in this corpus.
Search patents in G03F- Granted patents
- 102
- Published applications
- 106
- Assignees
- 66
- Inventors
- 297
- Latest grant
- 16 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
| 2000 | 1 | 0 |
| 2001 | 3 | 1 |
| 2002 | 7 | 2 |
| 2003 | 5 | 4 |
| 2004 | 2 | 6 |
| 2005 | 5 | 5 |
| 2006 | 6 | 6 |
| 2007 | 2 | 6 |
| 2008 | 4 | 4 |
| 2009 | 4 | 0 |
| 2010 | 3 | 7 |
| 2011 | 6 | 1 |
| 2012 | 3 | 2 |
| 2013 | 1 | 3 |
| 2014 | 4 | 3 |
| 2015 | 1 | 2 |
| 2016 | 4 | 0 |
| 2017 | 1 | 2 |
| 2018 | 1 | 4 |
| 2019 | 3 | 7 |
| 2020 | 5 | 8 |
| 2021 | 4 | 6 |
| 2022 | 6 | 7 |
| 2023 | 4 | 6 |
| 2024 | 5 | 4 |
| 2025 | 3 | 5 |
| 2026 | 1 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of manufacturing EUV photo masks16 Jun 2026US 12,656,671 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for manufacturing drive circuit, drive circuit and photomask25 Nov 2025US 12,484,302 B2Hkc Corporation Limited
- Reflective mask blank for EUV lithography and substrate with conductive film25 Feb 2025US 12,235,575 B2AGC Inc.
- Mask and reticle protection with atomic layer deposition (ALD)14 Jan 2025US 12,197,125 B2Nano-Master, Inc.
- Substrate with film for reflective mask blank, reflective mask blank, and method for manufacturing reflective mask22 Oct 2024US 12,124,162 B2Shin-Etsu Chemical Co., Ltd.
- Reflective mask blank, method for producing reflective mask blank, reflective mask, and method for producing reflective mask30 Jul 2026US 2026/0219566 A1AGC Inc.
- System and method for discharging a patterning device30 Jul 2026US 2026/0219591 A1ASML Netherlands B. V.
- Substrate with conductive film, reflective mask blank, reflective mask, and method for manufacturing semiconductor device28 May 2026US 2026/0147268 A1Hoya Corporation
- Reflective mask and fabricating method thereof12 Feb 2026US 2026/0044066 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Blank mask and photomask8 Jan 2026US 2026/0010065 A1LG Innotek Co., Ltd.
Most cited
By later US patents
- Scattering bar OPC application method for mask ESD prevention164US 7,614,030 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2009
- Photomask and photomask blank32US 4,440,841 ADai Nippon Insatsu Kabushiki Kaisha · 1984
- Photomask arrangement protecting reticle patterns from electrostatic discharge damage (ESD)27US 5,989,754 ATaiwan Semiconductor Manufacturing Company.Ltd · 1999
- Electron beam system with reduced charge buildup22US 4,453,086 AInternational Business Machines Corporation · 1984
- Extreme ultraviolet (EUV) lithography masks17US 6,984,475 B1Advanced Micro Devices, Inc. · 2006