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US 2026/0219566 A1Published application
Reflective mask blank, method for producing reflective mask blank, reflective mask, and method for producing reflective mask
AssigneeAGC Inc.
InventorsYusuke ONO, Hiroaki IWAOKA, Taiga FUDETANI
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Abstract
A reflective mask blank having a conductive film with little transmittance variation in light transmittance at 632 nm and 1064 nm, and excellent flatness is provided. A reflective mask blank for EUV lithography comprising: a substrate; a conductive film provided on one side of the substrate; a multilayer reflective film to reflect EUV light, provided on the other side of the substrate; and an absorber film provided on a side of the multilayer reflective film opposite to the substrate.
Claims22
A reflective mask blank for EUV lithography comprising:
- a substrate;
- a conductive film provided on one side of the substrate;
- a multilayer reflective film to reflect EUV light, provided on the other side of the substrate;
- and
- an absorber film provided on a side of the multilayer reflective film opposite to the substrate,
- wherein the conductive film comprises at least one element selected from the group consisting of tantalum and chromium,
- wherein the total content of nitrogen and boron in the conductive film is more than 33 atomic % relative to all the atoms in the conductive film,
- wherein the conductive film has a thickness of from 20 to 150 nm,
- wherein the conductive film is thicker at the center of the substrate than at a peripheral portion of the substrate, and
- wherein the maximum in-plane thickness variation of the conductive film is from 0.30 to 1.00 nm.
7 more elements
A substrate with a conductive film, comprising a substrate;
- and
- a conductive film provided on one surface of the substrate,
- wherein the conductive film comprises at least one element selected from the group consisting of tantalum and chromium,
- wherein the total content of nitrogen and boron in the conductive film is more than 33 atomic % relative to all the atoms in the conductive film,
- wherein the conductive film has a thickness of from 20 to 150 nm,
- wherein the conductive film is thicker at the center of the substrate than at the peripheral portion of the substrate, and
- wherein the maximum in-plane thickness variation of the conductive film is from 0.30 to 1.00 nm.
4 more elements
Dependencies are inferred from the claim text.