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US 6,984,475 B1Granted
Extreme ultraviolet (EUV) lithography masks
AssigneeAdvanced Micro Devices, Inc.
InventorsHarry J. Levinson, Bruno M. LaFontaine, Ivan Lalovic, Adam R. Pawloski
Life of this patent
Estimating the term…
Abstract
An extreme ultraviolet (EUV) lithography mask blank. The mask blank can include a substrate having a reflector film disposed over an upper surface of the substrate. The mask blank is provided with structural features to facilitate indirect grounding of the reflector film.
Claims20
An extreme ultraviolet (EUV) lithography mask blank, comprising:
- a substrate having an upper surface, a lower surface and a edge surface connecting the upper surface and the lower surface;
- and
- a reflector film disposed over the upper surface and at least a portion of the edge surface such that a region of the reflector film disposed on the edge surface is non-planar with an upper surface of a region of the reflector film disposed on the upper surface of the substrate.
An extreme ultraviolet (EUV) lithography mask blank, comprising:
- a substrate having an upper surface and a lower surface;
- a reflector film disposed over the upper surface of the substrate;
- a backside conductive layer disposed on the lower surface of the substrate;
- and
- a means to electrically couple the conductive layer and the reflector film.
2 more elements
Dependencies are inferred from the claim text.