Substrate with conductive film, reflective mask blank, reflective mask, and method for manufacturing semiconductor device

A reflective mask blank comprising:

• a substrate having two main surfaces;
• a conductive film disposed on one of the two main surfaces of the substrate;
• a multilayer reflective film disposed on the other of the two main surfaces of the substrate;
• and
• an absorber film disposed on the multilayer reflective film, wherein
• the conductive film comprises an outermost layer disposed on an outermost surface of the conductive film on a side opposite to the substrate, and a conductive layer disposed between the outermost layer and the substrate,
• the outermost layer comprises a metal (M), boron (B), and oxygen (O), and
• the outermost layer has a maximum peak at binding energy of 190 eV or more and 195 eV or less in a B1s narrow spectrum obtained by analysis by X-ray photoelectron spectroscopy.

A reflective mask comprising:

• a substrate having two main surfaces;
• a conductive film disposed on one of the two main surfaces of the substrate;
• a multilayer reflective film disposed on the other of the two main surfaces of the substrate;
• and
• an absorber pattern disposed on the multilayer reflective film, wherein
• the conductive film comprises an outermost layer disposed on an outermost surface of the conductive film on a side opposite to the substrate, and a conductive layer disposed between the outermost layer and the substrate,
• the outermost layer comprises a metal (M), boron (B), and oxygen (O), and
• the outermost layer has a maximum peak at binding energy of 190 eV or more and 195 eV or less in a B1s narrow spectrum obtained by analysis by X-ray photoelectron spectroscopy.