Method for correcting lithography pattern of surface plasma

A method for correcting a lithography pattern of a surface plasma, comprising:

• forming a plurality of test patterns on a test mask, each of the test patterns being characterized by at least a first test parameter and a second test parameter associated with the first test parameter;
• exposing a photoresist layer by using the test mask containing the test patterns to form a plurality of photoresist patterns, each of the photoresist patterns being characterized by at least a first exposure parameter and a second exposure parameter associated with the first exposure parameter;
• establishing a first data table based on a correspondence between the first test parameter and the second test parameter of the test pattern and the first exposure parameter and the second exposure parameter of the photoresist pattern;
• processing the first data table according to the first exposure parameter to obtain a second data table;
• and
• respectively correcting second test parameters of a plurality of design patterns according to the second data table to obtain corrected design patterns, and manufacturing a mask for exposure by using the corrected design patterns,
• wherein the first exposure parameter of each photoresist pattern is the same as a first test parameter of a test pattern corresponding to the photoresist pattern,
• wherein the processing the first data table according to the first exposure parameter to obtain a second data table comprises:
• sequentially selecting each test pattern as a target pattern, and searching the first data table for at least two first exposure parameters, wherein the at least two first exposure parameters are the same as a first test parameter of the target pattern;
• acquiring second exposure parameters associated with the at least two first exposure parameters;
• selecting a second exposure parameter closest to a second test parameter of the target pattern from all associated second exposure parameters as a preferred second exposure parameter;
• searching the first data table for a preferred second test parameter, wherein the preferred second test parameter corresponds to a first test parameter same as the first test parameter of the target pattern and corresponds to the preferred second exposure parameter;
• and
• establishing the second data table based on the first test parameter, the second test parameter and the preferred second test parameter of all target patterns.