Cut-mask patterning process for fin-like field effect transistor (FinFET) device

A method comprising:

• providing a substrate including a surface with a first layer and a second layer;
• forming first, second, and third elongated protrusions in a third layer above the first and second layers;
• forming a first patterned layer over the three elongated protrusions;
• etching the three elongated protrusions to form a first pattern, the first pattern removing a relatively larger portion of the second elongated protrusion, and relatively smaller portions of the first and third elongated protrusions, whereby an area is formed by the larger and smaller portions;
• forming a second patterned layer over the first pattern of elongated protrusions, the second pattern including at least two rectangular sub-patterns over the area separated, at least in part, by a sub-resolution feature;
• and
• etching ends of the first and third elongated protrusions that extend in the area.

A method for patterning a plurality of features in a non-rectangular pattern, the method comprising:

• providing a substrate including a surface with a first layer and a second layer;
• forming first, second, and third elongated protrusions in a third layer above the first and second layers;
• etching the three elongated protrusions to form a first pattern, the first pattern removing a relatively larger portion of the second elongated protrusion, and relatively smaller portions of the first and third elongated protrusions, whereby an area is formed by the larger and smaller portions;
• forming a second patterned layer over the first pattern of elongated protrusions using an end cutting mask, the end cutting mask including at least two rectangular sub-patterns over the area and a sub-resolution feature therebetween;
• and
• etching ends of the first and third elongated protrusions that extend in the area.