G03F 1/22
Masks or mask blanks for imaging by radiation of 100nm or shorter
Official title: Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
G03F1/22 (Masks or mask blanks for imaging by radiation of 100nm or shorter) appears on 1,799 US grants and 1,989 published applications in this corpus.
Search patents in G03F- Granted patents
- 1,799
- Published applications
- 1,989
- Assignees
- 319
- Inventors
- 2,653
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 3 | 0 |
| 1978 | 0 | 0 |
| 1979 | 3 | 0 |
| 1980 | 2 | 0 |
| 1981 | 9 | 0 |
| 1982 | 3 | 0 |
| 1983 | 3 | 0 |
| 1984 | 4 | 0 |
| 1985 | 9 | 0 |
| 1986 | 10 | 0 |
| 1987 | 10 | 0 |
| 1988 | 4 | 0 |
| 1989 | 11 | 0 |
| 1990 | 21 | 0 |
| 1991 | 17 | 0 |
| 1992 | 17 | 0 |
| 1993 | 21 | 0 |
| 1994 | 19 | 0 |
| 1995 | 12 | 0 |
| 1996 | 24 | 0 |
| 1997 | 13 | 0 |
| 1998 | 19 | 0 |
| 1999 | 29 | 0 |
| 2000 | 14 | 0 |
| 2001 | 25 | 7 |
| 2002 | 34 | 30 |
| 2003 | 33 | 48 |
| 2004 | 37 | 50 |
| 2005 | 29 | 50 |
| 2006 | 42 | 47 |
| 2007 | 23 | 35 |
| 2008 | 21 | 40 |
| 2009 | 26 | 36 |
| 2010 | 41 | 37 |
| 2011 | 39 | 51 |
| 2012 | 37 | 54 |
| 2013 | 48 | 80 |
| 2014 | 67 | 112 |
| 2015 | 82 | 82 |
| 2016 | 103 | 81 |
| 2017 | 80 | 77 |
| 2018 | 62 | 74 |
| 2019 | 62 | 94 |
| 2020 | 88 | 120 |
| 2021 | 87 | 124 |
| 2022 | 110 | 146 |
| 2023 | 112 | 147 |
| 2024 | 108 | 141 |
| 2025 | 79 | 121 |
| 2026 | 46 | 105 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Extreme ultraviolet light generation apparatus and electronic device manufacturing method29 Sep 2026US 12,750,939 B2Gigaphoton Inc.
- Reflective mask blank, reflective mask, reflective mask manufacturing method, and reflective mask correction method22 Sep 2026US 12,743,016 B2Tekscend Photomask Corp.
- Method of manufacturing extreme ultraviolet (EUV) mask for forming semiconductor memory device15 Sep 2026US 12,736,868 B2Samsung Electronics Co., Ltd.
- Photomask for extreme ultraviolet1 Sep 2026US 12,724,341 B2LuminaMask Co., Ltd.
- Substrate for mask blanks and method for manufacturing the same11 Aug 2026US 12,704,776 B2Shin-Etsu Chemical Co., Ltd.
- Euv photomask and manufacturing method thereof8 Oct 2026US 2026/0310060 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Reflective mask blank, refelctive mask, and method for producing reflective mask8 Oct 2026US 2026/0310061 A1AGC Inc.
- Reflective mask blank, reflective mask, reflective mask blank producing method, and reflective mask producing method8 Oct 2026US 2026/0310066 A1AGC Inc.
- Method for stitching lines8 Oct 2026US 2026/0310096 A1Tokyo Electron Limited
- Euv mask registration control method and euv mask manufacturing method including the control method1 Oct 2026US 2026/0299397 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Glass substrate-holding tool and method for producing an EUV mask blank by employing the same526US 8,967,608 B2Asahi Glass Company, Limited · 2015
- Glass substrate-holding tool525US 8,192,901 B2Asahi Glass Company, Limited · 2012
- Method of producing a thin silicon-on-insulator layer381US 5,013,681 AThe United States of America as represented by the Secretary of the Navy · 1991
- Stress adjustment method of X-ray mask347US 6,265,113 B1Mitsubishi Denki Kabushiki Kaisha · 2001
- Extreme ultraviolet lithography process and mask331US 8,841,047 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014