Method of manufacturing extreme ultraviolet (EUV) mask for forming semiconductor memory device

A method of manufacturing an extreme ultraviolet mask, the method comprising:

• preparing a pair of preliminary layouts including a first preliminary layout and a second preliminary layout;
• forming a plurality of preliminary target patterns by using a plurality of first preliminary spacer patterns formed by using the first preliminary layout and a plurality of second preliminary spacer patterns formed by using the second preliminary layout;
• evaluating presence or absence of an abnormal target pattern among the plurality of preliminary target patterns;
• preparing a pair of layouts including a first layout configured to form a plurality of first spacer patterns and a second layout configured to form a plurality of second spacer patterns by modifying the pair of preliminary layouts when the plurality of preliminary target patterns include the abnormal target pattern;
• and
• manufacturing a pair of extreme ultraviolet masks including a first extreme ultraviolet mask and a second extreme ultraviolet mask with the pair of layouts to form a plurality of target patterns by using the plurality of first spacer patterns and the plurality of second spacer patterns,
• wherein the plurality of first preliminary spacer patterns extend in a first direction, the plurality of second preliminary spacer patterns extend in a second direction different from the first direction in which the plurality of first preliminary spacer patterns extend while crossing the plurality of first preliminary spacer patterns, and
• wherein the first preliminary layout is modified as the first layout where each of the plurality of first spacer patterns extends in the first direction and a first portion and a second portion of each of the plurality of first spacer patterns have different horizontal widths, or the first portion of each of the plurality of first spacer patterns, which extend in the first direction, and the second portion of each of the plurality of first spacer patterns extend with a mutual inclination.

A method of manufacturing an extreme ultraviolet mask configured to form a semiconductor memory device including a substrate having a memory cell region, a dummy region surrounding the memory cell region, and a plurality of active regions in the memory cell region, a plurality of word lines in the substrate, a plurality of bit lines on the substrate and respectively connected to the plurality of active regions through a plurality of direct contacts, and a plurality of capacitor structures including a plurality of lower electrodes respectively and electrically connected to the plurality of active regions through a plurality of contact plugs, a capacitor dielectric layer, and an upper electrode, the method comprising:

• preparing a pair of preliminary layouts including a first preliminary layout and a second preliminary layout;
• forming, on the substrate, a plurality of preliminary target patterns by using a plurality of first preliminary spacer patterns formed by using the first preliminary layout and a plurality of second preliminary spacer patterns formed by using the second preliminary layout;
• evaluating presence or absence of an abnormal target pattern among the plurality of preliminary target patterns;
• preparing a pair of layouts including a first layout configured to form a plurality of first spacer patterns and a second layout configured to form a plurality of second spacer patterns by modifying the pair of preliminary layouts when the plurality of preliminary target patterns include the abnormal target pattern;
• and
• forming a pair of extreme ultraviolet masks including a first extreme ultraviolet mask and a second extreme ultraviolet mask with the pair of layouts to form a plurality of lower electrodes by using the plurality of first spacer patterns and the plurality of second spacer patterns,
• wherein the plurality of first preliminary spacer patterns extend in a first direction, the plurality of second preliminary spacer patterns extend in a second direction different from the first direction in which the plurality of first preliminary spacer patterns extend while crossing the plurality of first preliminary spacer patterns, and
• wherein the first preliminary layout is modified as the first layout where each of the plurality of first spacer patterns extends in the first direction and a first portion and a second portion of each of the plurality of first spacer patterns have different horizontal widths, or the first portion of each of the plurality of first spacer patterns, which extends in the first direction, and the second portion of each of the plurality of first spacer patterns extend with a mutual inclination.