Euv mask registration control method and euv mask manufacturing method including the control method
AssigneeSamsung Electronics Co., Ltd.
InventorsMyoungsoo Lee, Changsu Park
Life of this patent
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Abstract
A registration control method includes irradiating a laser beam or an E-beam onto a reflective multilayer of an EUV mask, the EUV mask having a substrate, the reflective multilayer on the substrate, and an absorption layer on the reflective multilayer, generating an asymmetrical deformation element in the reflective multilayer, and correcting the registration of a pattern formed on the absorption layer.
Claims20
A method of controlling registration of an extreme ultra-violet (EUV) mask, the method comprising:
- irradiating a laser beam or an E-beam onto a reflective multilayer of the EUV mask comprising a substrate, the reflective multilayer on the substrate, and an absorption layer on the reflective multilayer;
- generating an asymmetric deformation element in the reflective multilayer;
- and
- correcting the registration of a pattern formed in the absorption layer.
A method of controlling registration of an extreme ultra-violet (EUV) mask, the method comprising:
- inspecting registration of a pattern of an absorption layer of the EUV mask comprising a substrate, a reflective multilayer on the substrate, and the absorption layer on the reflective multilayer;
- irradiating a laser beam or an E-beam onto the reflective multilayer through the substrate from a rear surface of the EUV mask;
- generating an asymmetric deformation element in the reflective multilayer;
- and
- correcting the registration,
- wherein irradiating the laser beam or the E-beam comprises asymmetrically deforming (i) an intensity distribution on a plane of the laser beam or (ii) an energy distribution on a plane of the E- beam.
A method of manufacturing an extreme ultra-violet (EUV) mask, the method comprising:
- preparing an EUV blank mask comprising a substrate, a reflective multilayer on the substrate, and an absorption layer on the reflective multilayer;
- forming a pattern in the absorption layer of the EUV blank mask;
- and
- controlling registration of the pattern,
- wherein controlling the registration comprises:
- irradiating a laser beam or an E-beam onto the reflective multilayer,
- generating an asymmetric deformation element in the reflective multilayer, and
- correcting the registration.
Dependencies are inferred from the claim text.