Reflective mask blank, reflective mask, reflective mask manufacturing method, and reflective mask correction method

A reflective mask comprising:

• a substrate;
• a reflective film having a multi-layer film structure formed on the substrate and configured to reflect an EUV light;
• a protective film formed on the reflective film and configured to protect the reflective film;
• and
• an absorption film comprising a multi-layer film formed on the protective film and configured to absorb the EUV light, wherein
• a transfer pattern is formed on the absorption film,
• the absorption film is formed by alternately depositing a first absorption film and a second absorption film, such that the first absorption film is in contact with the protective film and an outermost surface layer of the absorption film is the first absorption film,
• under the presence of an etching gas, a correction etching rate in electron beam correction of the first absorption film is within a range of 20 times or more and 100 times or less a correction etching rate in electron beam correction of the second absorption film,
• the first absorption film contains one or more elements selected from vanadium, cobalt, nickel, zirconium, niobium, and hafnium,
• the second absorption film contains one or more elements selected from indium and platinum,
• the surface roughness Ra of the reflective mask is less than 1.0 nm,
• a total film thickness of the absorption film is 60 nm or less, and
• a film thickness of the first absorption film is within a range of 0.5 nm or more and 6 nm or less.