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US 9,171,716 B2Granted
Method of forming metal oxide hardmask
AssigneeASM Japan K.K.
InventorHideaki Fukuda
Life of this patent
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Abstract
A method of forming a metal oxide hardmask on a template includes: providing a template constituted by a photoresist or amorphous carbon formed on a substrate; and depositing by atomic layer deposition (ALD) a metal oxide hardmask on the template constituted by a material having a formula SixM(1-x)Oy wherein M represents at least one metal element, x is less than one including zero, and y is approximately two or a stoichiometrically-determined number.
Claims20
A method of forming a metal oxide hardmask on a template, comprising:
- providing a template constituted by a photoresist or amorphous carbon formed on a substrate;
- and
- depositing by atomic layer deposition (ALD) a metal oxide hardmask on the template constituted by a material having a formula SixM(1-x)Oy wherein M represents at least one metal element, x is less than one including zero, and y is approximately two or a stoichiometrically-determined number,
- wherein the metal oxide hardmask is constituted by a laminate of atomic layers of a metal oxide and atomic layers of a silicon oxide alternately deposited at a cycle ratio C such that the laminate has the formula SixM(1-x)Oy, where C=m/(m+n) where m is the number of cycles for metal oxide consecutive layers, and n is the number of cycles for silicon oxide consecutive layers,
- wherein M is a metal whose fluoride has a vapor pressure of more than 100 Pa at a temperature for cleaning a reactor used for depositing the metal oxide hardmask.
2 more elements
A method of forming a metal oxide hardmask on a template, comprising:
- providing a template constituted by a photoresist or amorphous carbon formed on a substrate;
- and
- depositing by atomic layer deposition (ALD) a metal oxide hardmask on the template constituted by a material having a formula SixM(1-x)Oy wherein M represents at least one metal element, x is less than one including zero, and y is approximately two or a stoichiometrically-determined number,
- wherein the metal oxide hardmask is constituted by a laminate of atomic layers of a metal oxide and atomic layers of a silicon oxide alternately deposited at a cycle ratio C such that the laminate has the formula SixM(1-x)Oy, where C=m/(m+n) where m is the number of cycles for metal oxide consecutive layers, and n is the number of cycles for silicon oxide consecutive layers,
- wherein the ALD is plasma enhanced ALD (PE-ALD),
- wherein the depositing of the metal oxide hardmask comprises supplying a precursor for the metal oxide hardmask in pulses and applying RF power in pulses between the pulses of the precursor, wherein at least one reactant gas is supplied while applying the RF power, wherein the precursor is a metal-containing alkylamino compound or metal-containing alkoxy compound.
3 more elements
Dependencies are inferred from the claim text.