H10P 14/6922
The material containing si, o and at least one of h, n
Official title: {the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC}
H10P14/6922 (The material containing si, o and at least one of h, n) appears on 5,588 US grants and 5,267 published applications in this corpus.
Search patents in H10P- Granted patents
- 5,588
- Published applications
- 5,267
- Assignees
- 799
- Inventors
- 8,640
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 6 | 0 |
| 1977 | 14 | 0 |
| 1978 | 10 | 0 |
| 1979 | 2 | 0 |
| 1980 | 6 | 0 |
| 1981 | 5 | 0 |
| 1982 | 9 | 0 |
| 1983 | 6 | 0 |
| 1984 | 6 | 0 |
| 1985 | 17 | 0 |
| 1986 | 13 | 0 |
| 1987 | 9 | 0 |
| 1988 | 20 | 0 |
| 1989 | 20 | 0 |
| 1990 | 14 | 0 |
| 1991 | 24 | 0 |
| 1992 | 23 | 0 |
| 1993 | 22 | 0 |
| 1994 | 38 | 0 |
| 1995 | 39 | 0 |
| 1996 | 42 | 0 |
| 1997 | 51 | 0 |
| 1998 | 69 | 0 |
| 1999 | 128 | 0 |
| 2000 | 199 | 0 |
| 2001 | 302 | 111 |
| 2002 | 284 | 294 |
| 2003 | 307 | 329 |
| 2004 | 265 | 325 |
| 2005 | 212 | 359 |
| 2006 | 250 | 361 |
| 2007 | 234 | 269 |
| 2008 | 175 | 201 |
| 2009 | 168 | 191 |
| 2010 | 186 | 155 |
| 2011 | 171 | 128 |
| 2012 | 105 | 106 |
| 2013 | 128 | 119 |
| 2014 | 116 | 115 |
| 2015 | 140 | 196 |
| 2016 | 198 | 195 |
| 2017 | 166 | 195 |
| 2018 | 200 | 203 |
| 2019 | 187 | 200 |
| 2020 | 169 | 247 |
| 2021 | 190 | 211 |
| 2022 | 167 | 187 |
| 2023 | 137 | 184 |
| 2024 | 123 | 165 |
| 2025 | 140 | 157 |
| 2026 | 76 | 64 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10P 14/6927The material being a silicon oxynitride1,597
- H10P 14/6923The material being boron or phosphorus doped silicon oxides849
- H10P 14/6924The material being halogen doped silicon oxides440
- H10P 14/6925The material comprising hydrogen silsesquioxane178
- H10P 14/6926The material comprising alkyl silsesquioxane141
Recent patents
- Alkoxydisiloxanes and dense organosilica films made therefrom29 Sep 2026US 12,751,224 B2Versum Materials US, LLC
- Ion implantation for increased adhesion with resist material22 Sep 2026US 12,745,578 B2APPLIED Materials.Inc.
- Integrated circuit device15 Sep 2026US 12,740,130 B2Samsung Electronics Co., Ltd.
- Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium15 Sep 2026US 12,740,351 B2Kokusai Electric Corporation
- Nanosheet transistor device with bottom isolation8 Sep 2026US 12,733,220 B2International Business Machines Corporation
- Semiconductor device and methods of manufacturing the semiconductor device8 Oct 2026US 2026/0314019 A1SK hynix Inc.
- Semiconductor device and method8 Oct 2026US 2026/0314458 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device24 Sep 2026US 2026/0293275 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for manufacturing semiconductor device24 Sep 2026US 2026/0293543 A1Kioxia Corporation
- Selective deposition of metal oxides using silanes as an inhibitor24 Sep 2026US 2026/0293544 A1Lam Research Corporation
Most cited
By later US patents
- Method for depositing an amorphous carbon layer1,124US 6,573,030 B1APPLIED Materials.Inc. · 2003
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Sequencing of the recipe steps for the optimal low-k HDP-CVD processing882US 5,937,323 AAPPLIED Materials.Inc. · 1999
- Zirconium and/or hafnium oxynitride gate dielectric829US 6,013,553 ATexas Instruments Incorporated · 2000
- Sequencing of the recipe steps for the optimal low-dielectric constant HDP-CVD Processing817US 6,217,658 B1APPLIED Materials.Inc. · 2001