Nanosheet transistor device with bottom isolation
AssigneeInternational Business Machines Corporation
InventorsRuilong Xie, Veeraraghavan S. Basker, Andrew M. Greene, Pietro Montanini
Life of this patent
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Abstract
A method of forming a nanosheet transistor device is provided. The method includes forming a segment stack of alternating intermediate sacrificial segments and nanosheet segments on a bottom sacrificial segment, wherein the segment stack is on a mesa and a nanosheet template in on the segment stack. The method further includes removing the bottom sacrificial layer to form a conduit, and forming a fill layer in the conduit and encapsulating at least a portion of the segment stack.
Claims17
A nanosheet transistor device, comprising:
- a fill layer section on a top surface and at least a portion of opposite sidewalls of a mesa, wherein the mesa is on a substrate;
- one or more nanosheet plates above the fill layer section, wherein the fill layer section is beneath at least a portion of the one or more nanosheet plates and extends from a first side of the one or more nanosheet plates to a second side of the one or more nanosheet plates opposite the first side;
- and
- a stack liner section on a portion of opposite sidewalls of the mesa below the fill layer section, wherein the stack liner section separates a gauge block from the substrate.
A nanosheet transistor device, comprising:
- a fill layer section on a top surface and at least a portion of opposite sidewalls of a mesa, wherein the mesa is on a substrate;
- one or more nanosheet plates above the fill layer section, wherein the fill layer section is beneath at least a portion of the one or more nanosheet plates and extends from a first side of the one or more nanosheet plates to a second side of the one or more nanosheet plates opposite the first side;
- a gate dielectric layer on the fill layer section and each of the one or more nanosheet plates;
- and
- a stack liner section on a portion of opposite sidewalls of the mesa below the fill layer section, wherein the stack liner section separates a gauge block from the substrate.
A nanosheet transistor device, comprising:
- a fill layer section on a mesa, wherein the mesa is on a substrate;
- one or more nanosheet plates above the fill layer section, wherein a cross-section of the fill layer section has an upside-down U-shape underneath the one or more nanosheet plates and an H-shape between a first gate structure and a second gate structure;
- a gate dielectric layer on the fill layer section and each of the one or more nanosheet plates;
- and
- a stack liner section on a portion of opposite sidewalls of the mesa below the fill layer section, wherein the stack liner section separates a gauge block from the substrate.
Dependencies are inferred from the claim text.