Ion implantation for increased adhesion with resist material

A semiconductor processing method comprising:

• forming a layer of silicon-containing material on a semiconductor substrate;
• performing an ion implantation treatment on the layer of silicon-containing material to yield a treated layer of silicon-containing material;
• contacting the treated layer of silicon-containing material with an adhesion agent;
• and
• forming a layer of resist material on the treated layer of silicon-containing material.

A semiconductor processing method comprising:

• forming a layer of silicon-containing material on a semiconductor substrate, wherein the layer of silicon-containing material comprises spin-on glass;
• performing an ion implantation treatment on the layer of silicon-containing material to yield a treated layer of silicon-containing material;
• contacting the treated layer of silicon-containing material with an adhesion agent, wherein the adhesion agent comprises a silazane group;
• forming a layer of resist material on the treated layer of silicon-containing material;
• and
• patterning the layer of resist material.