Semiconductor device and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYin-Jie Pan, Yu-Yun Peng
Life of this patent
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Abstract
A semiconductor device and method of manufacture comprise forming a channel-less, porous low K material. The material may be formed using a silicon backbone precursor and a hydrocarbon precursor to form a matrix material. The material may then be cured to remove a porogen and help to collapse channels within the material. As such, the material may be formed with a scaling factor of less than or equal to about 1.8.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- receiving a semiconductor substrate;
- forming metallization layers over the semiconductor substrate, the metallization layers comprising conductive elements embedded within a dielectric material;
- depositing a first etch stop layer over the conductive elements;
- depositing a second etch stop layer over the first etch stop layer;
- depositing a matrix material with porogens over the second etch stop layer;
- curing the matrix material with ultraviolet light to create a channel-less porous low-K material with isolated pores and a scaling factor less than or equal to about 1.8;
- patterning the channel-less porous low-K material to form trench openings;
- after the trench openings have been formed, patterning the channel-less porous low-K material to form via openings;
- depositing a barrier layer into the trench openings and the via openings;
- and
- filling a remainder of the via openings and the trench openings with a conductive material.
A method of manufacturing a semiconductor device, the method comprising:
- forming a first etch stop layer over a first conductive element within a metallization layer;
- forming a second etch stop layer over the first etch stop layer;
- depositing and modifying a first dielectric layer over the second etch stop layer to create isolated pores located within the first dielectric layer;
- and
- forming a conductive via and a conductive trench which collectively extend through the first dielectric layer, the second etch stop layer, and the first etch stop layer.
A semiconductor device comprising:
- depositing a first dielectric material over a substrate;
- embedding a conductive material within the first dielectric material;
- depositing a porogen over the first dielectric material and the conductive material;
- removing the porogen after the depositing the porogen, wherein after the removing the porogen a second dielectric material remains with isolated pores;
- and
- forming a via extending at least partially through the second dielectric material.
Dependencies are inferred from the claim text.