Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
AssigneeKokusai Electric Corporation
InventorKeigo Nishida
Life of this patent
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Abstract
There is provided a technique that includes: (a) forming a first element-containing film on a substrate by supplying a first element-containing gas to the substrate in an oxygen-free atmosphere; and (b) forming an oxide film by oxidizing the first element-containing film by supplying an oxygen-containing gas to the substrate, wherein in (b), temperature of the substrate is selected depending on a thickness of the first element-containing film.
Claims21
A method of processing a substrate, comprising:
- (a) forming a first element-containing film on the substrate by supplying a first element-containing gas to the substrate in an oxygen-free atmosphere;
- and
- (b) forming an oxide film by oxidizing the first element-containing film without an oxidized surface at a processing temperature of the substrate by supplying an oxygen-containing gas to the substrate,
- wherein in (b), the processing temperature of the substrate is selected depending on a thickness of the first element-containing film.
A substrate processing apparatus comprising:
- a first gas supplier configured to supply a first element-containing gas to a substrate;
- a second gas supplier configured to supply an oxygen-containing gas to the substrate;
- and
- a controller configured to be capable of controlling the first gas supplier and the second gas supplier to perform a process to the substrate, the process including:
- (a) forming a first element-containing film on the substrate by supplying the first element-containing gas to the substrate in an oxygen-free atmosphere;
- and
- (b) forming an oxide film by oxidizing the first element-containing film without an oxidized surface at a processing temperature of the substrate by supplying the oxygen-containing gas to the substrate,
- wherein in (b), the processing temperature of the substrate is selected depending on a thickness of the first element-containing film.
A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process comprising:
- (a) forming a first element-containing film on a substrate by supplying a first element-containing gas to the substrate in an oxygen-free atmosphere;
- and
- (b) forming an oxide film by oxidizing the first element-containing film without an oxidized surface at a processing temperature of the substrate by supplying an oxygen-containing gas to the substrate,
- wherein in (b), the processing temperature of the substrate is selected depending on a thickness of the first element-containing film.
Dependencies are inferred from the claim text.