H10P 14/692
Composed of oxides, glassy oxides or oxide-based glasses
Official title: composed of oxides, glassy oxides or oxide-based glasses
H10P14/692 (Composed of oxides, glassy oxides or oxide-based glasses) appears on 14,507 US grants and 14,937 published applications in this corpus.
Search patents in H10P- Granted patents
- 14,507
- Published applications
- 14,937
- Assignees
- 1,680
- Inventors
- 19,836
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 26 | 0 |
| 1977 | 33 | 0 |
| 1978 | 29 | 0 |
| 1979 | 17 | 0 |
| 1980 | 13 | 0 |
| 1981 | 15 | 0 |
| 1982 | 20 | 0 |
| 1983 | 18 | 0 |
| 1984 | 19 | 0 |
| 1985 | 41 | 0 |
| 1986 | 39 | 0 |
| 1987 | 33 | 0 |
| 1988 | 37 | 0 |
| 1989 | 36 | 0 |
| 1990 | 25 | 0 |
| 1991 | 39 | 0 |
| 1992 | 42 | 0 |
| 1993 | 58 | 0 |
| 1994 | 76 | 0 |
| 1995 | 75 | 0 |
| 1996 | 76 | 0 |
| 1997 | 101 | 0 |
| 1998 | 155 | 0 |
| 1999 | 237 | 0 |
| 2000 | 354 | 0 |
| 2001 | 543 | 236 |
| 2002 | 532 | 603 |
| 2003 | 590 | 688 |
| 2004 | 535 | 678 |
| 2005 | 440 | 712 |
| 2006 | 472 | 767 |
| 2007 | 454 | 545 |
| 2008 | 367 | 478 |
| 2009 | 362 | 436 |
| 2010 | 402 | 359 |
| 2011 | 374 | 312 |
| 2012 | 261 | 328 |
| 2013 | 331 | 358 |
| 2014 | 328 | 428 |
| 2015 | 478 | 698 |
| 2016 | 675 | 731 |
| 2017 | 623 | 704 |
| 2018 | 660 | 748 |
| 2019 | 685 | 811 |
| 2020 | 759 | 928 |
| 2021 | 680 | 757 |
| 2022 | 554 | 670 |
| 2023 | 502 | 634 |
| 2024 | 501 | 571 |
| 2025 | 498 | 495 |
| 2026 | 287 | 262 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Treating silicon nitride based dielectric films6 Oct 2026US 12,757,657 B2APPLIED Materials.Inc.
- Semiconductor structure, semiconductor device with air spacers, and method for fabricating the same6 Oct 2026US 12,757,738 B2Nanya Technology Corporation
- Metal oxide thin film precursor, method of fabricating metal oxide thin film using the same, and semiconductor device including the metal oxide thin film29 Sep 2026US 12,747,258 B2University-Industry Cooperation Group of Kyung Hee University
- Substrate processing apparatus, method of manufacturing semiconductor device, method of processing substrate, and recording medium29 Sep 2026US 12,747,501 B2Kokusai Electric Corporation
- Alkoxydisiloxanes and dense organosilica films made therefrom29 Sep 2026US 12,751,224 B2Versum Materials US, LLC
- Methods of patterning substrates8 Oct 2026US 2026/0307168 A1University of Rochester
- Semiconductor device and methods of manufacturing the semiconductor device8 Oct 2026US 2026/0314019 A1SK hynix Inc.
- Multi-function etching sacrificial layers to protect three-dimensional dummy fins in semiconductor devices8 Oct 2026US 2026/0314347 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Selective Deposition of Barrier Layer8 Oct 2026US 2026/0314362 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method8 Oct 2026US 2026/0314458 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Semiconductor device and manufacturing method thereof4,349US 7,674,650 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Semiconductor device and manufacturing method thereof4,064US 7,732,819 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Fin structure of FinFET1,337US 9,093,530 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Atomic layer deposition with nitrate containing precursors1,176US 6,203,613 B1International Business Machines Corporation · 2001