Atomic layer deposition with nitrate containing precursors
AssigneeInternational Business Machines Corporation
InventorsStephen McConnell Gates, Deborah Ann Neumayer
Life of this patent
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Abstract
Metal nitrate-containing precursor compounds are employed in atomic layer deposition processes to form metal-containing films, e.g. metal, metal oxide, and metal nitride, which films exhibit an atomically abrupt interface and an excellent uniformity.
Claims53
A method of forming a metal-containing film on a substrate comprising an atomic layer deposition process wherein a metal nitrate-containing precursor is introduced into a reactor containing said substrate.
A method for forming a metal oxide film on a substrate by atomic layer deposition comprising subjecting said substrate to a sequence of alternating pulses of three or more different gases to a substrate, wherein one of said gases comprising a metal nitrate-containing precursor, another of said gases is an inert gas and another of said gases is an oxidizing agent.
A method of forming a metal film on a substrate by atomic layer deposition comprising subjecting said substrate to alternating pulses of a metal nitrate-containing precursor, a purge gas and a reducing agent.
A method of forming a metal nitride film on a substrate by atomic layer deposition said method comprising subjecting said substrate to alternating pulses of a metal nitrate-containing precursor, a purge gas and a nitriding agent.
In an atomic layer deposition process for forming a metal-containing film, the improvement comprising at least a step of introducing a metal-containing precursor into a reactor containing a substrate, said metal containing precursor having the formula M(NO3)x wherein M is a metal selected from the group consisting of Ti, Ga, Zr, Sn, Co, V, Pt, Pd, Fe, Ni, Mo, W, Ag, Au, Hf, Cr, Cu, Mn, La, Y, Al, Gd, Nd, Sm, Si, Nb, Ta, and In;
- and x is the valence of M.
A method for forming a multicomponent or multilayer metal oxide film on a substrate by atomic layer deposition comprising subjecting said substrate to a sequence of alternating pulses of four or more different gases, wherein one of said gases comprises a metal nitrate-containing precursor, another of said gases is an inert gas, another of said gases is an oxidizing agent and another of said gases is a metal non-nitrate containing precursor.
A method for forming a multicomponent or multilayer metal film on a substrate by atomic layer deposition comprising subjecting said substrate to a sequence of alternating pulses of four or more different gases, wherein one of said gases comprises a metal nitrate-containing precursor, another of said gases is an inert gas, another of said gases is a reducing agent and another of said gases is a metal non-nitrate containing precursor.
A method for forming a multicomponent or multilayer metal nitride film on a substrate by atomic layer deposition comprising subjecting said substrate to a sequence of alternating pulses of four or more different gases, wherein one of said gases comprises a metal nitrate-containing precursor, another of said gases is an inert gas, another of said gases is a nitriding agent and another of said gases is a metal non-nitrate containing precursor.
Dependencies are inferred from the claim text.