H10P 14/6938
The material containing at least one metal element
Official title: {the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides}
H10P14/6938 (The material containing at least one metal element) appears on 5,340 US grants and 5,917 published applications in this corpus.
Search patents in H10P- Granted patents
- 5,340
- Published applications
- 5,917
- Assignees
- 993
- Inventors
- 8,526
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 10 | 0 |
| 1977 | 10 | 0 |
| 1978 | 9 | 0 |
| 1979 | 9 | 0 |
| 1980 | 2 | 0 |
| 1981 | 6 | 0 |
| 1982 | 3 | 0 |
| 1983 | 4 | 0 |
| 1984 | 8 | 0 |
| 1985 | 15 | 0 |
| 1986 | 10 | 0 |
| 1987 | 10 | 0 |
| 1988 | 5 | 0 |
| 1989 | 9 | 0 |
| 1990 | 5 | 0 |
| 1991 | 5 | 0 |
| 1992 | 8 | 0 |
| 1993 | 19 | 0 |
| 1994 | 19 | 0 |
| 1995 | 18 | 0 |
| 1996 | 20 | 0 |
| 1997 | 35 | 0 |
| 1998 | 52 | 0 |
| 1999 | 59 | 0 |
| 2000 | 94 | 0 |
| 2001 | 139 | 88 |
| 2002 | 188 | 233 |
| 2003 | 205 | 291 |
| 2004 | 197 | 282 |
| 2005 | 177 | 273 |
| 2006 | 174 | 331 |
| 2007 | 176 | 216 |
| 2008 | 154 | 208 |
| 2009 | 156 | 169 |
| 2010 | 160 | 148 |
| 2011 | 146 | 123 |
| 2012 | 109 | 140 |
| 2013 | 140 | 160 |
| 2014 | 140 | 172 |
| 2015 | 186 | 260 |
| 2016 | 247 | 276 |
| 2017 | 235 | 251 |
| 2018 | 225 | 296 |
| 2019 | 259 | 279 |
| 2020 | 284 | 352 |
| 2021 | 243 | 285 |
| 2022 | 211 | 265 |
| 2023 | 203 | 285 |
| 2024 | 199 | 238 |
| 2025 | 214 | 184 |
| 2026 | 129 | 112 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Metal oxide thin film precursor, method of fabricating metal oxide thin film using the same, and semiconductor device including the metal oxide thin film29 Sep 2026US 12,747,258 B2University-Industry Cooperation Group of Kyung Hee University
- Method of gap filling for semiconductor device15 Sep 2026US 12,740,083 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Bottom thick oxidation growth in high aspect ratio features15 Sep 2026US 12,740,355 B2APPLIED Materials.Inc.
- Method for forming region-selective thin film using selectivating agent8 Sep 2026US 12,729,427 B2EGTM Co., Ltd.
- Selective deposition of barrier layer8 Sep 2026US 12,733,473 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Methods of patterning substrates8 Oct 2026US 2026/0307168 A1University of Rochester
- Multi-function etching sacrificial layers to protect three-dimensional dummy fins in semiconductor devices8 Oct 2026US 2026/0314347 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Selective Deposition of Barrier Layer8 Oct 2026US 2026/0314362 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Doped underlayer suitable for extreme ultraviolet radiation dose reduction1 Oct 2026US 2026/0305269 A1ASM IP Holding B. V.
- Aluminum Nitride Bonding1 Oct 2026US 2026/0305273 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Semiconductor device and manufacturing method thereof4,349US 7,674,650 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Semiconductor device and manufacturing method thereof4,064US 7,732,819 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Atomic layer deposition with nitrate containing precursors1,176US 6,203,613 B1International Business Machines Corporation · 2001
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003