Bottom thick oxidation growth in high aspect ratio features
AssigneeApplied Materials, Inc.
InventorsDimitrios Pavlopoulos, Hansel Lo, Christopher S. Olsen
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Abstract
The present disclosure generally relate to semiconductor device fabrication, and more particularly, to methods of forming a bottom thick oxide layer in a high aspect ratio semiconductor structures. In certain embodiments, the method includes depositing a non-conformal oxide layer on in a feature on a substrate, performing an oxidation process to thermally grow an oxide layer beneath the deposited non-conformal oxide layer in the feature, and selectively stripping the non-conformal oxide layer to expose the thermally grown oxide layer.
Claims20
A method for forming an oxide layer, suitable for use in semiconductor manufacturing, the method comprising:
- forming a non-conformal oxide layer on a substrate;
- and then
- performing an oxidation process to oxidize the substrate and grow a thermal oxide layer underneath the non-conformal oxide layer;
- and
- selectively removing the non-conformal oxide layer to expose an oxidized portion of the substrate.
A method for forming an oxide layer, suitable for use in semiconductor manufacturing, the method comprising:
- forming a non-conformal aluminum oxide layer on a substrate;
- and then
- performing an oxidation process to oxide the substrate and grow a thermal oxide layer underneath the non-conformal aluminum oxide layer;
- and
- selectively removing the non-conformal aluminum oxide layer to expose an oxidized portion of the substrate.
A method for forming an oxide layer, suitable for use in semiconductor manufacturing, the method comprising:
- forming a non-conformal aluminum oxide layer on a silicon containing substrate using a deposition process;
- and then
- performing an oxidation process to oxidize the silicon containing substrate and grow a thermal oxide layer underneath the non-conformal aluminum oxide layer;
- and
- performing a wet etching process to selectively remove the non-conformal aluminum oxide layer and expose an oxidized portion of the silicon containing substrate.
Dependencies are inferred from the claim text.