H10P 14/6939
Characterised by the metal
Official title: {characterised by the metal}
H10P14/6939 (Characterised by the metal) appears on 4,357 US grants and 5,021 published applications in this corpus.
Search patents in H10P- Granted patents
- 4,357
- Published applications
- 5,021
- Assignees
- 837
- Inventors
- 7,296
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 10 | 0 |
| 1977 | 10 | 0 |
| 1978 | 9 | 0 |
| 1979 | 9 | 0 |
| 1980 | 2 | 0 |
| 1981 | 6 | 0 |
| 1982 | 3 | 0 |
| 1983 | 4 | 0 |
| 1984 | 8 | 0 |
| 1985 | 15 | 0 |
| 1986 | 10 | 0 |
| 1987 | 10 | 0 |
| 1988 | 4 | 0 |
| 1989 | 8 | 0 |
| 1990 | 4 | 0 |
| 1991 | 3 | 0 |
| 1992 | 4 | 0 |
| 1993 | 14 | 0 |
| 1994 | 15 | 0 |
| 1995 | 11 | 0 |
| 1996 | 10 | 0 |
| 1997 | 16 | 0 |
| 1998 | 18 | 0 |
| 1999 | 29 | 0 |
| 2000 | 45 | 0 |
| 2001 | 75 | 58 |
| 2002 | 115 | 152 |
| 2003 | 150 | 197 |
| 2004 | 134 | 202 |
| 2005 | 130 | 221 |
| 2006 | 139 | 272 |
| 2007 | 131 | 183 |
| 2008 | 130 | 175 |
| 2009 | 129 | 133 |
| 2010 | 142 | 124 |
| 2011 | 126 | 112 |
| 2012 | 97 | 124 |
| 2013 | 119 | 129 |
| 2014 | 125 | 148 |
| 2015 | 165 | 238 |
| 2016 | 224 | 250 |
| 2017 | 212 | 236 |
| 2018 | 204 | 268 |
| 2019 | 235 | 255 |
| 2020 | 258 | 311 |
| 2021 | 225 | 256 |
| 2022 | 180 | 228 |
| 2023 | 157 | 248 |
| 2024 | 169 | 222 |
| 2025 | 191 | 175 |
| 2026 | 118 | 104 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10P 14/69391The material containing aluminium1,921
- H10P 14/69392The material containing hafnium1,433
- H10P 14/69394The material containing titanium994
- H10P 14/69395The material containing zirconium904
- H10P 14/69397The material containing two or more metal elements758
- H10P 14/69393The material containing tantalum756
- H10P 14/69396The material containing at least one rare earth metal element606
Recent patents
- Metal oxide thin film precursor, method of fabricating metal oxide thin film using the same, and semiconductor device including the metal oxide thin film29 Sep 2026US 12,747,258 B2University-Industry Cooperation Group of Kyung Hee University
- Method of gap filling for semiconductor device15 Sep 2026US 12,740,083 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Bottom thick oxidation growth in high aspect ratio features15 Sep 2026US 12,740,355 B2APPLIED Materials.Inc.
- Method for forming region-selective thin film using selectivating agent8 Sep 2026US 12,729,427 B2EGTM Co., Ltd.
- RF pulsing assisted tungsten-containing film deposition1 Sep 2026US 12,727,407 B2APPLIED Materials.Inc.
- Methods of patterning substrates8 Oct 2026US 2026/0307168 A1University of Rochester
- Multi-function etching sacrificial layers to protect three-dimensional dummy fins in semiconductor devices8 Oct 2026US 2026/0314347 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Aluminum Nitride Bonding1 Oct 2026US 2026/0305273 A1APPLIED Materials.Inc.
- Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus24 Sep 2026US 2026/0286517 A1Kokusai Electric Corporation
- Method for manufacturing semiconductor device24 Sep 2026US 2026/0293543 A1Kioxia Corporation
Most cited
By later US patents
- Semiconductor device and manufacturing method thereof4,349US 7,674,650 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Semiconductor device and manufacturing method thereof4,064US 7,732,819 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Atomic layer deposition with nitrate containing precursors1,176US 6,203,613 B1International Business Machines Corporation · 2001
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003