H10P 14/69396
The material containing at least one rare earth metal element
Official title: {the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium}
H10P14/69396 (The material containing at least one rare earth metal element) appears on 606 US grants and 699 published applications in this corpus.
Search patents in H10P- Granted patents
- 606
- Published applications
- 699
- Assignees
- 193
- Inventors
- 1,175
- Latest grant
- 4 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1984 | 2 | 0 |
| 1985 | 2 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 2 | 0 |
| 1999 | 7 | 0 |
| 2000 | 4 | 0 |
| 2001 | 5 | 1 |
| 2002 | 10 | 21 |
| 2003 | 25 | 33 |
| 2004 | 16 | 28 |
| 2005 | 24 | 54 |
| 2006 | 28 | 39 |
| 2007 | 25 | 37 |
| 2008 | 32 | 27 |
| 2009 | 19 | 29 |
| 2010 | 31 | 26 |
| 2011 | 23 | 25 |
| 2012 | 23 | 19 |
| 2013 | 23 | 29 |
| 2014 | 27 | 28 |
| 2015 | 31 | 26 |
| 2016 | 32 | 28 |
| 2017 | 30 | 35 |
| 2018 | 18 | 22 |
| 2019 | 25 | 28 |
| 2020 | 23 | 27 |
| 2021 | 22 | 19 |
| 2022 | 21 | 24 |
| 2023 | 15 | 32 |
| 2024 | 23 | 31 |
| 2025 | 22 | 21 |
| 2026 | 11 | 10 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Radical plasma treatment for semiconductor metal gate stack4 Aug 2026US 12,701,938 B2APPLIED Materials.Inc.
- Epitaxial gallium nitride alloy ferroelectronics28 Jul 2026US 12,696,699 B2The Regents of the University of Michigan
- Deposition of oxide thin films14 Jul 2026US 12,685,045 B2ASM IP Holding B. V.
- Method for manufacturing semiconductor device16 Jun 2026US 12,660,523 B2Kioxia Corporation
- Methods for patterning substrates to adjust voltage properties26 May 2026US 12,642,021 B2APPLIED Materials.Inc.
- Method for manufacturing semiconductor device24 Sep 2026US 2026/0293543 A1Kioxia Corporation
- Manufacturing Method Of Semiconductor Device13 Aug 2026US 2026/0239937 A1Semiconductor Energy Laboratory Co.Ltd.
- Epitaxial nitride ferroelectronic devices30 Jul 2026US 2026/0223414 A1The Regents of the University of Michigan
- Pulsed chemical vapor deposition with programmable logic control25 Jun 2026US 2026/0182266 A1APPLIED Materials.Inc.
- Method of depositing a rare earth metal oxide film18 Jun 2026US 2026/0168092 A1ASM IP Holding B. V.
Most cited
By later US patents
- Method for manufacturing thin film using atomic layer deposition885US 6,270,572 B1Samsung Electronics Co., Ltd. · 2001
- Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate767US 6,420,279 B1Sharp Laboratories of America, Inc. · 2002
- Atomic layer-deposited LaAlO3 films for gate dielectrics693US 7,045,430 B2Micron Technology, Inc. · 2006
- Lanthanum hafnium oxide dielectrics650US 7,235,501 B2Micron Technology, Inc. · 2007
- Lanthanide oxide / hafnium oxide dielectric layers627US 7,192,824 B2Micron Technology, Inc. · 2007