Manufacturing Method Of Semiconductor Device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei YAMAZAKI, Shunichi ITO, Yoshihiro KOMATSU, Shinobu KAWAGUCHI, Shinya SASAGAWA
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Abstract
A semiconductor device in which variation in characteristics is small is provided. A first insulator is formed; a first insulator is formed; a conductor is formed over the first insulator; a second insulator is formed over the conductor; a third insulator is formed over the second insulator; an oxide is formed over the third insulator; first heat treatment is performed; and second heat treatment following the first heat treatment is performed. The temperature of the first heat treatment is lower than the temperature of the second heat treatment.
Claims15
A semiconductor device comprising:
- a first insulator over a substrate;
- a second insulator over the first insulator;
- a third insulator over the second insulator;
- an oxide over the third insulator;
- a first conductor and a second conductor over the oxide;
- a fourth insulator over the first conductor and the second conductor, the fourth insulator comprising an opening reaching the oxide;
- a fifth insulator between the first conductor and the second conductor in the opening;
- and
- a third conductor over the fifth insulator in the opening,
- wherein the first insulator comprises an amorphous structure,
- wherein the second insulator comprises aluminum or hafnium,
- wherein the first insulator is configured to inhibit diffusion of impurities, and
- wherein the second insulator is configured to inhibit diffusion of one or both of hydrogen and oxygen more than the third insulator.
A semiconductor device comprising:
- an oxide over a substrate;
- a first conductor and a second conductor over the oxide;
- a first insulator over the first conductor and the second conductor, the first insulator comprising an opening reaching the oxide;
- a second insulator between the first conductor and the second conductor in the opening;
- a third insulator over the second insulator in the opening;
- a third conductor over the third insulator in the opening;
- and
- a fourth insulator over the first insulator, the second insulator, the third insulator, and the third conductor,
- wherein the third insulator comprises aluminum or hafnium,
- wherein the fourth insulator comprises an amorphous structure,
- wherein the third insulator is configured to inhibit diffusion of one or both of hydrogen and oxygen more than the second insulator, and
- wherein the fourth insulator is configured to inhibit diffusion of impurities.
A semiconductor device comprising:
- a first insulator over a substrate;
- a second insulator over the first insulator;
- a third insulator over the second insulator;
- an oxide over the third insulator;
- a first conductor and a second conductor over the oxide;
- a fourth insulator over the first conductor and the second conductor, the fourth insulator comprising an opening reaching the oxide;
- a fifth insulator between the first conductor and the second conductor in the opening;
- a sixth insulator over the fifth insulator in the opening;
- a third conductor over the sixth insulator in the opening;
- and
- a seventh insulator over the fourth insulator, the fifth insulator, the sixth insulator, and the third conductor,
- wherein each of the first insulator and the seventh insulator comprises an amorphous structure,
- wherein each of the second insulator and the fifth insulator comprises aluminum or hafnium,
- wherein each of the first insulator and the seventh insulator is configured to inhibit diffusion of impurities,
- wherein the second insulator is configured to inhibit diffusion of one or both of hydrogen and oxygen more than the third insulator, and
- wherein the sixth insulator is configured to inhibit diffusion of one or both of hydrogen and oxygen more than the fifth insulator.
Dependencies are inferred from the claim text.