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US 2026/0168092 A1Published application
Method of depositing a rare earth metal oxide film
AssigneeASM IP Holding B.V.
InventorsRishabh Rastogi, Ren-Jie Chang, Fu Tang, Petri Raisanen, Jereld Lee Winkler
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Abstract
A substrate processing method for forming a rare earth metal oxide film includes providing a substrate in a reaction chamber and performing a rare earth metal oxide deposition cycle. The rare earth metal oxide deposition cycle includes pulsing a rare earth metal precursor and pulsing a reactant into the reaction chamber.
Claims20
A method for depositing a rare earth metal oxide film, the method comprising:
- providing a substrate comprising a surface in a reaction chamber comprising a reaction space;
- and
- performing at least one rare earth metal oxide deposition cycle to deposit the rare earth metal oxide film, wherein the rare earth metal oxide deposition cycle comprises:
- pulsing a rare earth metal precursor to the reaction space, wherein the rare earth metal precursor comprises a rare earth metal, and wherein the rare earth metal precursor comprises a metalorganic precursor, and
- pulsing a reactant to the reaction space, wherein the reactant comprises an oxidant comprising one or more of H2O, hydrogen peroxide, or N2O.
2 more elements
A method for forming a gate structure, the method comprising:
- providing a substrate comprising a surface in a reaction chamber;
- and
- performing at least one lanthanum oxide deposition cycle to form a lanthanum oxide film, wherein the lanthanum oxide deposition cycle comprises:
- pulsing a lanthanum precursor, wherein the lanthanum precursor comprises tris(N,N′-di-i-propylformamidinato)lanthanum(III), and
- pulsing a reactant into the reaction chamber, wherein the reactant comprises H2O, and wherein the reactant does not comprise O2 or O3.
2 more elements
A system for depositing a rare earth metal oxide film, the system comprising:
- a reaction chamber;
- a susceptor in the reaction chamber configured to hold a substrate;
- a rare earth metal precursor source configured to provide a rare earth metal precursor into the reaction chamber, wherein the rare earth metal precursor comprises a rare earth metal, and wherein the rare earth metal precursor comprises a metalorganic precursor;
- a reactant source configured to provide a reactant into the reaction chamber, wherein the reactant comprises at least one of H2O, hydrogen peroxide, or N2O;
- and
- a controller comprising an addressable storage medium, wherein the controller is configured to control gas flow into the reaction chamber, a temperature of the reaction chamber, a pressure of the reaction chamber, and a movement of the substrate to:
- provide the substrate on the susceptor, and
- performing at least one rare earth metal oxide deposition cycle, wherein the rare earth metal oxide deposition cycle comprises:
- pulsing the rare earth metal precursor, and
- pulsing the reactant into the reaction chamber.
7 more elements
Dependencies are inferred from the claim text.