Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate
AssigneeSharp Laboratories of America, Inc.
InventorsYoshi Ono, Wei-Wei Zhuang, Rajendra Solanki
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Abstract
Methods of forming hafnium oxide, zirconium oxide and nanolaminates of hafnium oxide and zirconium oxide are provided. These methods utilize atomic layer deposition techniques incorporating nitrate-based precursors, such as hafnium nitrate and zirconium nitrate. The use of these nitrate based precursors is well suited to forming high dielectric constant materials on hydrogen passivated silicon surfaces.
Claims18
A method of forming a high-k dielectric film on a substrate comprising the steps of:
- a) providing a hydrogen passivated silicon surface on the semiconductor substrate within an atomic layer deposition chamber;
- b) heating the substrate to a temperature below 200° C.;
- c) introducing anhydrous hafnium nitrate into the chamber;
- d) purging the chamber with nitrogen or inert gas;
- and
- e) introducing a hydrating gas into the chamber, whereby a monolayer of hafnium oxide is deposited.
A method of forming a high-k dielectric film on a substrate comprising the steps of:
- a) providing a hydrogen passivated silicon surface on the semiconductor substrate within an atomic layer deposition chamber;
- b) heating the substrate to a temperature below 200° C.;
- c) introducing anhydrous zirconium nitrate into the chamber;
- d) purging the chamber with nitrogen;
- and
- e) introducing a hydrating gas into the chamber, whereby a monolayer of zirconium oxide is deposited.
A method of forming a nanolaminate, which comprises hafnium oxide and zirconium oxide, comprising the steps of:
- a) providing a semiconductor substrate having a hydrogen passivated silicon surface within an atomic layer deposition chamber;
- b) heating the substrate to a temperature below 200° C.;
- c) forming a layer of hafnium oxide by a process comprising the steps of:
- (i) introducing anhydrous hafnium nitrate into the chamber;
- (ii) purging the chamber;
- (iii) introducing a hydrating gas into the chamber, whereby a monolayer of hafnium oxide is formed;
- (iv) purging the chamber;
- and
- d) forming a layer of zirconium oxide by a process comprising the step of:
- (i) introducing anhydrous zirconium nitrate into the chamber;
- (ii) purging the chamber;
- and
- (iii) introducing a hydrating gas into the chamber, whereby a monolayer of zirconium oxide is formed;
- and
- (iv) purging the chamber.
Dependencies are inferred from the claim text.