Deposition of oxide thin films
AssigneeASM IP Holding B.V.
InventorsSuvi P. Haukka, Elina Färm, Raija H. Matero, Eva E. Tois, Hidemi Suemori, Antti Juhani Niskanen, Sung-Hoon Jung, Petri Räisänen
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Abstract
Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.
Claims13
A reactor, comprising:
- a deposition chamber for supporting a substrate;
- a metal precursor source connected to the deposition chamber and configured to provide a vapor phase metal precursor;
- a sole molecular oxygen (O2) source connected to the deposition chamber and configured to provide molecular oxygen (O2) precursor;
- and
- a control system configured to control the reactor to perform operations to deposit a thin film of insulating metal oxide on the substrate, wherein the operations comprise:
- supplying the vapor phase metal precursor to the deposition chamber from the metal precursor source such that the vapor phase metal precursor contacts the substrate;
- and
- supplying the molecular oxygen (O2) precursor to the deposition chamber from the sole molecular oxygen (O2) source such that the molecular oxygen (O2) precursor contacts the substrate.
Dependencies are inferred from the claim text.