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US 7,235,501 B2Granted
Lanthanum hafnium oxide dielectrics
AssigneeMicron Technology, Inc.
InventorsKie Y. Ahn, Leonard Forbes
Life of this patent
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Abstract
Dielectric layers containing a lanthanum hafnium oxide layer, where the lanthanum hafnium oxide layer is formed as a structure of one or more monolayers, and methods of fabricating such dielectric layers provide an insulating layer in a variety of structures for use in a wide range of electronic devices.
Claims58
A method comprising:
- forming a dielectric layer containing a lanthanum hafnium oxide layer, the lanthanum hafnium oxide layer formed using atomic layer deposition, wherein forming the lanthanum hafnium oxide layer using atomic layer deposition includes:
- introducing a lanthanum-containing precursor to a substrate, introducing the lanthanum-containing precursor including pulsing at least one of a trisethylcyclopentadionatolanthanum precursor or a trisdipyvaloylmethanatolanthanum precursor;
- and
- introducing a hafnium-containing precursor to the substrate.
1 more element
A method comprising:
- forming a dielectric layer containing a lanthanum hafnium oxide layer in an integrated circuit, the lanthanum hafnium oxide layer arranged as one or more monolayers, wherein forming the lanthanum hafnium oxide layer includes:
- introducing a lanthanum-containing precursor to a substrate, wherein introducing the lanthanum-containing precursor includes pulsing at least one of a trisethylcyclopentadionatolanthanum precursor or a trisdipyvaloylmethanatolanthanum precursor;
- and
- introducing a hafnium-containing precursor to the substrate.
1 more element
A method comprising:
- forming a dielectric layer containing a lanthanum hafnium oxide layer in an integrated circuit, the lanthanum hafnium oxide layer arranged as one or more monolayers, wherein forming the lanthanum hafnium oxide layer includes:
- introducing a lanthanum-containing precursor to a substrate, wherein introducing the lanthanum-containing precursor includes pulsing a La(C11H19O2)3CH3(OCH2CH2)4OCH3 precursor;
- and
- introducing a hafnium-containing precursor to the substrate.
1 more element
A method comprising:
- forming a dielectric layer containing a lanthanum hafnium oxide layer in an integrated circuit, the lanthanum hafnium oxide layer arranged as one or more monolayers, wherein forming the lanthanum hafnium oxide layer includes:
- introducing a lanthanum-containing precursor to a substrate, wherein introducing the lanthanum-containing precursor includes pulsing a La(C11H19O2)3 precursor;
- and
- introducing a hafnium-containing precursor to the substrate.
1 more element
A method comprising:
- forming a memory array in a substrate including forming a dielectric layer containing a lanthanum hafnium oxide layer, the lanthanum hafnium oxide layer formed using atomic layer deposition, wherein forming the lanthanum hafnium oxide layer using atomic layer deposition includes:
- pulsing a lanthanum-containing precursor to a substrate, pulsing the lanthanum-containing precursor includes pulsing at least one of a trisethylcyclopentadionatolanthanum precursor or a trisdipyvaloylmethanatolanthanum precursor;
- and
- pulsing a hafnium-containing precursor to the substrate;
- and
- forming a connection to couple the memory array to a bus.
3 more elements
A method comprising:
- forming a memory array in a substrate including forming a dielectric layer containing a lanthanum hafnium oxide layer in an integrated circuit, the lanthanum hafnium oxide layer arranged as one or more monolayers, wherein forming the lanthanum hafnium oxide layer includes:
- pulsing a lanthanum-containing precursor to a substrate, wherein pulsing the lanthanum-containing precursor includes pulsing at least one of a trisethylcyclopentadionatolanthanum precursor or a trisdipyvaloylmethanatolanthanum precursor;
- and
- pulsing a hafnium-containing precursor to the substrate;
- and
- forming a connection to couple the memory array to a bus.
3 more elements
A method comprising:
- forming a memory array in a substrate including forming a dielectric layer containing a lanthanum hafnium oxide layer in an integrated circuit, the lanthanum hafnium oxide layer arranged as one or more monolayers, wherein forming the lanthanum hafnium oxide layer includes:
- pulsing a lanthanum-containing precursor to a substrate, wherein pulsing the lanthanum-containing precursor includes pulsing a La(C11H19O2)3CH3(OCH2CH2)4OCH3 precursor;
- and
- pulsing a hafnium-containing precursor to the substrate;
- and
- forming a connection to couple the memory array to a bus.
3 more elements
A method comprising:
- providing a controller;
- coupling an integrated circuit to the controller, wherein at least one of the integrated circuit or the controller includes a dielectric layer containing a lanthanum hafnium oxide layer, the lanthanum hafnium oxide layer formed using atomic layer deposition, wherein forming the lanthanum hafnium oxide layer using atomic layer deposition includes:
- pulsing a lanthanum-containing precursor onto a substrate, pulsing the lanthanum-containing precursor including pulsing at least one of a trisethylcyclopentadionatolanthanum precursor or a trisdipyvaloylmethanatolanthanum precursor;
- and
- pulsing a hafnium-containing precursor onto the substrate.
2 more elements
A method comprising:
- providing a controller;
- coupling an integrated circuit to the controller, wherein at least one of the integrated circuit or the controller includes a dielectric layer containing a lanthanum hafnium oxide layer, the lanthanum hafnium oxide layer arranged as one or more monolayers, wherein forming the lanthanum hafnium oxide layer includes:
- pulsing a lanthanum-containing precursor onto a substrate, wherein pulsing the lanthanum-containing precursor includes pulsing at least one of a trisethylcyclopentadionatolanthanum precursor or a trisdipyvaloylmethanatolanthanum precursor;
- and
- pulsing a hafnium-containing precursor onto the substrate.
2 more elements
A method comprising:
- providing a controller;
- coupling an integrated circuit to the controller, wherein at least one of the integrated circuit or the controller includes a dielectric layer containing a lanthanum hafnium oxide layer, the lanthanum hafnium oxide layer arranged as one or more monolavers, wherein forming the lanthanum hafnium oxide layer includes:
- pulsing a lanthanum-containing precursor onto a substrate, wherein pulsing the lanthanum-containing precursor includes pulsing a La(C11H19O2)3CH3(OCH2CH2)4OCH3 precursor;
- and
- pulsing a hafnium-containing precursor onto the substrate.
2 more elements
Dependencies are inferred from the claim text.