Radical plasma treatment for semiconductor metal gate stack

A method of manufacturing an electronic device, the method comprising:

• treating a surface of a metal gate stack with a radical treatment, the metal gate stack comprising a dipole layer on a high-κ dielectric layer on an interfacial layer on a top surface of a channel located between a source and a drain on a substrate, wherein the radical treatment comprises flowing a mixture of about 50% nitrogen radicals (N2*) and about 50% hydrogen radicals (H*) over the surface of the metal gate stack, and wherein the radical treatment increases an amount of nitrogen (N2) atoms present in the high-κ dielectric layer by at least 50% compared to the amount of nitrogen (N2) atoms present in an untreated high-κ dielectric layer;
• and
• annealing the substrate at a temperature of less than or equal to 1050° C. to drive atoms from the dipole layer into the high-κ dielectric layer.

A method of manufacturing an electronic device, the method comprising:

• treating a surface of a metal gate stack with a radical treatment, the metal gate stack comprising a gate metal layer on a high-κ dielectric layer on an interfacial layer on a top surface of a channel located between a source and a drain on a substrate, wherein the radical treatment comprises flowing a mixture of about 50% nitrogen radicals (N2*) and about 50% hydrogen radicals (H*) over the surface of the metal gate stack, and wherein the radical treatment increases an amount of nitrogen (N2) atoms present in the high-κ dielectric layer by at least 50% compared to the amount of nitrogen (N2) atoms present in an untreated high-κ dielectric layer.