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US 2026/0223414 A1Published application
Epitaxial nitride ferroelectronic devices
AssigneeThe Regents of the University of Michigan
InventorsDing Wang, Ping Wang, Zetian Mi, Jiangnan Liu
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Abstract
A transistor device includes a substrate and a heterostructure supported by the substrate. The heterostructure includes a buffer layer supported by the substrate, a channel layer supported by the buffer layer, a barrier layer supported by the channel layer, and a gate dielectric layer supported by the barrier layer. The gate dielectric layer includes a ferroelectric nitride alloy, the ferroelectric nitride alloy including a Group IIIB element.
Claims28
A transistor device comprising:
- a substrate;
- and
- a heterostructure supported by the substrate;
- wherein the heterostructure comprises:
- a buffer layer supported by the substrate;
- a channel layer supported by the buffer layer;
- a barrier layer supported by the channel layer;
- and
- a gate dielectric layer supported by the barrier layer, the gate dielectric layer comprising a ferroelectric nitride alloy, the ferroelectric nitride alloy comprising a Group IIIB element.
6 more elements
A method of fabricating a transistor device, the method comprising:
- providing a buffer layer supported by a substrate;
- growing epitaxially a channel layer supported by the buffer layer;
- growing epitaxially a barrier layer supported by the channel layer;
- and
- growing a gate dielectric layer supported by the barrier layer, the gate dielectric layer comprising a ferroelectric III-nitride alloy, the ferroelectric III-nitride alloy comprising a Group IIIB element.
2 more elements
Dependencies are inferred from the claim text.