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US 2026/0293543 A1Published application
Method for manufacturing semiconductor device
AssigneeKioxia Corporation
InventorsYuta SAITO, Shinji MORI, Hiroyuki YAMASHITA
Life of this patent
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Abstract
A method for manufacturing a semiconductor device of an embodiment includes: forming a first film on a semiconductor layer containing silicon (Si), the first film containing a metal element and oxygen (O) and having a first thickness; and forming a second film between the semiconductor layer and the first film using radical oxidation, the second film containing silicon (Si) and oxygen (O) and having a second thickness larger than the first thickness.
Claims9
1-10. (canceled)
A method for manufacturing a semiconductor device, the method comprising:
- forming a first film on at least a first region of a semiconductor layer containing silicon (Si), the semiconductor layer including the first region and a second region, the first film containing a first metal element and oxygen (O), and the first film having a first thickness;
- and
- forming a second film between the first region and the first film and on the second region using radical oxidation, the second film containing silicon (Si) and oxygen (O), a second thickness of the second film on the first region being larger than the first thickness, and a third thickness of the second film on the second region being smaller than the second thickness.
Dependencies are inferred from the claim text.