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US 7,045,430 B2Granted
Atomic layer-deposited LaAlO3 films for gate dielectrics
AssigneeMicron Technology, Inc.
InventorsKie Y. Ahn, Leonard Forbes
Life of this patent
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Abstract
A dielectric film containing LaAlO3 and method of fabricating a dielectric film contained LaAlO3 produce a reliable gate dielectric having a thinner equivalent oxide thickness than attainable using SiO2. The LaAlO3 gate dielectrics formed are thermodynamically stable such that these gate dielectrics will have minimal reactions with a silicon substrate or other structures during processing. A LaAlO3 gate dielectric is formed by atomic layer deposition employing a lanthanum sequence and an aluminum sequence. A lanthanum sequence uses La(thd)3 (thd=2,2,6,6-tetramethyl-3,5-heptanedione) and ozone. An aluminum sequence uses either trimethylaluminum, Al(CH3)3, or DMEAA, an adduct of alane (AlH3) and dimethylethylamine [N(CH3)2(C2H5)], with distilled water vapor.
Claims53
A method of forming a dielectric film comprising:
- pulsing a lanthanum containing precursor into a reaction chamber containing a substrate;
- pulsing an aluminum containing precursor into the reaction chamber;
- and
- controlling the pulsing of the lanthanum containing precursor and the pulsing of the aluminum containing precursor to form by atomic layer deposition a dielectric layer containing LaAlO3 with a predetermined dielectric constant.
1 more element
A method of forming a dielectric film comprising:
- pulsing a lanthanum containing source gas into a reaction chamber containing a substrate;
- pulsing a first oxygen containing source gas into the reaction chamber;
- pulsing an aluminum containing source gas into the reaction chamber;
- pulsing a second oxygen containing source gas into the reaction chamber;
- and
- controlling the pulsing of the lanthanum containing precursor and the pulsing of the aluminum containing precursor to form by atomic layer deposition a dielectric layer containing LaAlO3 with a predetermined dielectric constant.
3 more elements
A method of forming a dielectric film comprising:
- pulsing a La(thd)3 (thd=2,2,6,6-tetramethyl-3,5-heptanedione) source gas into a reaction chamber containing a substrate;
- pulsing a first oxygen containing source gas into the reaction chamber;
- pulsing an aluminum containing source gas into the reaction chamber;
- and
- pulsing a second oxygen containing source gas into the reaction chamber to form a dielectric film containing LaAlO3 by atomic layer deposition.
2 more elements
The method of claim 16, wherein pulsing a La(thd)3 (thd=2,2,6,6-tetramethyl-3,5-heptanedione) source gas into a reaction chamber is perfonned with the substrate maintained at a temperature ranging from about 180 ° C. to about 425 ° C.
A method of forming a dielectric film comprising:
- pulsing a lanthanum containing source gas into a reaction chamber containing a substrate;
- pulsing a first oxygen containing source gas into the reaction chamber;
- pulsing a trimethylaluminum source gas into the reaction chamber;
- and
- pulsing a second oxygen containing source gas into the reaction chamber to form a dielectric film containing LaAlO3 by atomic layer deposition.
2 more elements
A method of forming a dielectric film comprising:
- pulsing a lanthanum containing source gas into a reaction chamber containing a substrate;
- pulsing a first oxygen containing source gas into the reaction chamber;
- pulsing a DMEAA source gas into the reaction chamber;
- and
- pulsing a second oxygen containing source gas into the reaction chamber to form a dielectric film containing LaAlO3 by atomic layer deposition.
2 more elements
The method of claim 31, wherein the pulsing period of time, the number of times the source is pulsed into the substrate, and the substrate temperature are controlled for each source gas to form a dielectric film containing LaAlO3, the dielectric film having a dielectric constant in the range from about 9 to about 30.
A method of forming a dielectric film comprising:
- pulsing a La(thd)3 (thd=2,2,6,6-tetramethyl-3,5-heptanedione) source gas into a reaction chamber containing a substrate;
- pulsing a first oxygen containing source gas into the reaction chamber;
- pulsing a trimethylaluminum source gas into the reaction chamber;
- and
- pulsing a second oxygen containing source gas into the reaction chamber to form a dielectric film containing LaAlO3 by atomic layer deposition.
2 more elements
A method of forming a dielectric film comprising:
- pulsing a La(thd)3 (thd=2,2,6,6-tetramethyl-3,5-heptanedione) source gas into a reaction chamber containing a substrate;
- pulsing a first oxygen containing source gas into the reaction chamber;
- pulsing a DMEAA source gas into the reaction chamber;
- and
- pulsing a second oxygen containing source gas into the reaction chamber to form a dielectric film containing LaAlO3 by atomic layer deposition.
2 more elements
A method of forming a transistor, comprising:
- forming first and second source/drain regions in a substrate;
- forming a body region between the first and second source/drain regions;
- forming a film on the body region between the first and second source/drain regions, comprising:
- pulsing a lanthanum containing precursor into a reaction chamber containing the substrate;
- pulsing a first oxygen containing precursor into the reaction chamber;
- pulsing an aluminum containing precursor into the reaction chamber;
- pulsing a second oxygen containing precursor into the reaction chamber;
- and
- controlling the pulsing of the lanthanum containing precursor and the pulsing of the aluminum containing precursor to form by atomic layer deposition a dielectric layer containing LaAlO3 with a predetermined dielectric constant;
- and
- coupling a gate to the film containing LaAlO3.
8 more elements
A method of forming a memory array, comprising:
- forming a number of access transistors, comprising:
- forming first and second source/drain regions;
- forming a body region between the first and second source/drain regions;
- forming a film containing LaAlO3 on the body region between the first and second source/drain regions, comprising:
- pulsing a lanthanum containing source gas into a reaction chamber containing a substrate;
- pulsing a first oxygen containing source gas into the reaction chamber;
- pulsing an aluminum containing source gas into a reaction chamber;
- and
- pulsing a second oxygen containing source gas into the reaction chamber;
- and
- controlling the pulsing of the lanthanum containing source gas and the pulsing of the aluminum containing source gas to form by atomic layer deposition a dielectric layer containing LaAlO3 with a predetermined dielectric constant;
- and
- coupling a gate to the film containing LaAlO3;
- forming a number of word lines coupled to a number of the gates of the number of access transistors;
- forming a number of source lines coupled to a number of the first source/drain regions of the number of access transistors;
- and
- forming a number of bit lines coupled to a number of the second source/drain regions of the number of access transistors.
14 more elements
A method of forming an information handling system, comprising:
- providing a processor;
- providing a memory array, wherein the memory array is formed by a method comprising:
- forming a number of access transistors, comprising:
- forming first and second source/drain regions;
- forming a body region between the first and second source/drain regions;
- forming a film containing LaAlO3 on the body region between the first and second source/drain regions, comprising:
- pulsing a lanthanum containing source gas into a reaction chamber containing a substrate;
- pulsing an aluminum containing source gas into a reaction chamber;
- and
- controlling the pulsing of the lanthanum containing source gas and the pulsing of the aluminum containing source gas to form by atomic layer deposition a dielectric layer containing LaAlO3 with a predetermined dielectric constant;
- and
- coupling a gate to the film containing LaAlO3;
- forming a number of word lines coupled to a number of the gates of the number of access transistors;
- forming a number of source lines coupled to a number of the first source/drain regions of the number of access transistors;
- forming a number of bit lines coupled to a number of the second source/drain regions of the number of access transistors;
- and
- coupling the processor to the memory array using a system bus.
14 more elements
A method of forming a transistor, comprising:
- forming first and second source/drain regions in a substrate;
- forming a body region between the first and second source/drain regions;
- forming a film on the body region between the first and second source/drain regions, comprising:
- pulsing a La(thd)3 (thd=2,2,6,6-tetramethyl-3,5-heptanedione) precursor into a reaction chamber containing the substrate;
- pulsing a first oxygen containing precursor into the reaction chamber;
- pulsing an aluminum containing precursor into the reaction chamber;
- pulsing a second oxygen containing precursor into the reaction chamber to form a dielectric film containing LaAlO3 by atomic layer deposition;
- and
- coupling a gate to the film containing LaAlO3.
6 more elements
A method of forming a transistor, comprising:
- forming first and second source/drain regions in a substrate;
- forming a body region between the first and second source/drain regions;
- forming a film on the body region between the first and second source/drain regions, comprising:
- pulsing a lanthanum containing precursor into a reaction chamber containing the substrate;
- pulsing a first oxygen containing precursor into the reaction chamber;
- pulsing an aluminum containing precursor into the reaction chamber;
- pulsing a second oxygen containing precursor into the reaction chamber to form a dielectric film containing LaAlO3 by atomic layer deposition, wherein the aluminum containing precursor is selected from a group consisting of a DMEAA precursor and a trimethylaluminum precursor and
- coupling a gate to the film containing LaAlO3.
5 more elements
A method of forming a memory array, comprising:
- forming a number of access transistors, comprising:
- forming first and second source/drain regions;
- forming a body region between the first and second source/drain regions;
- forming a film on the body region between the first and second source/drain regions, comprising:
- pulsing a La(thd)3 (thd=2,2,6,6-tetramethyl-3,5-heptanedione) source gas into a reaction chamber containing a substrate;
- pulsing a first oxygen containing source gas into the reaction chamber;
- pulsing an aluminum containing source gas into a reaction chamber;
- and
- pulsing a second oxygen containing source gas into the reaction chamber to form a dielectric film containing LaAlO3 by atomic layer deposition;
- and
- coupling a gate to the film containing LaAlO3;
- forming a number of word lines coupled to a number of the gates of the number of access transistors;
- forming a number of source lines coupled to a number of the first source/drain regions of the number of access transistors;
- and
- forming a number of bit lines coupled to a number of the second source/drain regions of the number of access transistors.
12 more elements
A method of forming a memory array, comprising:
- forming a number of access transistors, comprising:
- forming first and second source/drain regions;
- forming a body region between the first and second source/drain regions;
- forming a film on the body region between the first and second source/drain regions, comprising:
- pulsing a lanthanum containing source gas into a reaction chamber containing a substrate;
- pulsing a first oxygen containing source gas into the reaction chamber;
- pulsing an aluminum containing source gas into a reaction chamber;
- and
- pulsing a second oxygen containing source gas into the reaction chamber to form a dielectric film containing LaAlO3 by atomic layer deposition, wherein the aluminum containing source gas is selected from a group consisting of a DMEAA source gas and a trimethylaluminum source gas;
- and
- coupling a gate to the film containing LaAlO3;
- forming a number of word lines coupled to a number of the gates of the number of access transistors;
- forming a number of source lines coupled to a number of the first source/drain regions of the number of access transistors;
- and
- forming a number of bit lines coupled to a number of the second source/drain regions of the number of access transistors.
12 more elements
A method of forming an information handling system, comprising:
- providing a processor;
- and
- coupling a memory array to the processor using a system bus, wherein forming the memory array includes:
- forming a number of access transistors, comprising:
- forming first and second source/drain regions;
- forming a body region between the first and second source/drain regions;
- forming a film on the body region between the first and second source/drain regions, comprising:
- pulsing a La(thd)3 (thd=2,2,6,6-tetramethyl-3,5-heptanedione) source gas into a reaction chamber containing a substrate;
- pulsing an aluminum containing source gas into a reaction chamber to form a dielectric film containing LaAlO3 by atomic layer deposition;
- and
- coupling a gate to the film containing LaAlO3;
- forming a number of word lines coupled to a number of the gates of the number of access transistors;
- forming a number of source lines coupled to a number of the first source/drain regions of the number of access transistors;
- and
- forming a number of bit lines coupled to a number of the second source/drain regions of the number of access transistors.
12 more elements
A method of forming an information handling system, comprising:
- providing a processor;
- and
- coupling a memory array to the processor using a system bus, wherein forming the memory array includes:
- forming a number of access transistors, comprising:
- forming first and second source/drain regions;
- forming a body region between the first and second source/drain regions;
- forming a film on the body region between the first and second source/drain regions, comprising:
- pulsing a lanthanum containing source gas into a reaction chamber containing a substrate;
- pulsing an aluminum containing source gas into a reaction chamber to form a dielectric film containing LaAlO3 by atomic layer deposition, wherein the aluminum containing source gas is selected from a group consisting of a DMEAA source gas and a trimethylaluminum source gas;
- and
- coupling a gate to the film containing LaAlO3;
- forming a number of word lines coupled to a number of the gates of the number of access transistors;
- forming a number of source lines coupled to a number of the first source/drain regions of the number of access transistors;
- and
- forming a number of bit lines coupled to a number of the second source/drain regions of the number of access transistors.
12 more elements
Dependencies are inferred from the claim text.