H10P 14/69
Inorganic materials
H10P14/69 (Inorganic materials) appears on 17,250 US grants and 18,153 published applications in this corpus.
Search patents in H10P- Granted patents
- 17,250
- Published applications
- 18,153
- Assignees
- 1,903
- Inventors
- 22,869
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 31 | 0 |
| 1977 | 37 | 0 |
| 1978 | 32 | 0 |
| 1979 | 22 | 0 |
| 1980 | 20 | 0 |
| 1981 | 17 | 0 |
| 1982 | 25 | 0 |
| 1983 | 21 | 0 |
| 1984 | 28 | 0 |
| 1985 | 46 | 0 |
| 1986 | 52 | 0 |
| 1987 | 41 | 0 |
| 1988 | 45 | 0 |
| 1989 | 43 | 0 |
| 1990 | 27 | 0 |
| 1991 | 48 | 0 |
| 1992 | 45 | 0 |
| 1993 | 72 | 0 |
| 1994 | 87 | 0 |
| 1995 | 79 | 0 |
| 1996 | 82 | 0 |
| 1997 | 108 | 0 |
| 1998 | 166 | 0 |
| 1999 | 262 | 0 |
| 2000 | 384 | 0 |
| 2001 | 578 | 251 |
| 2002 | 583 | 660 |
| 2003 | 627 | 753 |
| 2004 | 599 | 745 |
| 2005 | 479 | 794 |
| 2006 | 512 | 870 |
| 2007 | 497 | 609 |
| 2008 | 415 | 573 |
| 2009 | 418 | 517 |
| 2010 | 452 | 422 |
| 2011 | 447 | 371 |
| 2012 | 325 | 406 |
| 2013 | 401 | 430 |
| 2014 | 394 | 533 |
| 2015 | 558 | 850 |
| 2016 | 806 | 912 |
| 2017 | 818 | 902 |
| 2018 | 834 | 971 |
| 2019 | 866 | 1031 |
| 2020 | 967 | 1167 |
| 2021 | 863 | 961 |
| 2022 | 710 | 871 |
| 2023 | 640 | 813 |
| 2024 | 644 | 724 |
| 2025 | 629 | 667 |
| 2026 | 368 | 350 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium6 Oct 2026US 12,757,653 B2Kokusai Electric Corporation
- Method of forming a silicon comprising layer6 Oct 2026US 12,757,656 B2ASM IP Holding B. V.
- Treating silicon nitride based dielectric films6 Oct 2026US 12,757,657 B2APPLIED Materials.Inc.
- Remote plasma deposition with electrostatic clamping6 Oct 2026US 12,757,682 B2Lam Research Corporation
- Semiconductor structure, semiconductor device with air spacers, and method for fabricating the same6 Oct 2026US 12,757,738 B2Nanya Technology Corporation
- Methods of patterning substrates8 Oct 2026US 2026/0307168 A1University of Rochester
- Method of forming protective film on outer circumferential portion including bevel portion of substrate8 Oct 2026US 2026/0311973 A1Ebara Corporation
- Semiconductor device and method of manufacture8 Oct 2026US 2026/0314011 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and methods of manufacturing the semiconductor device8 Oct 2026US 2026/0314019 A1SK hynix Inc.
- In situ nucleation of diamond for thermal conductive applications8 Oct 2026US 2026/0314280 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Semiconductor device and manufacturing method thereof4,349US 7,674,650 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Semiconductor device and manufacturing method thereof4,064US 7,732,819 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Fin structure of FinFET1,337US 9,093,530 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Atomic layer deposition with nitrate containing precursors1,176US 6,203,613 B1International Business Machines Corporation · 2001