Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A substrate processing apparatus comprising:

• a process chamber in which a process of forming a film on a substrate is performed;
• a first gas supply system configured to supply a first gas, which contains silicon, does not contain a Si-Si bond, and does not contain nitrogen, to the substrate in the process chamber;
• a second gas supply system configured to supply a second gas, which is a chlorosilane gas containing a Si-Si bond, to the substrate in the process chamber;
• a third gas supply system configured to supply a third gas, which contains a predetermined element capable of forming defects in the film, to the substrate in the process chamber;
• a fourth gas supply system configured to supply a fourth gas containing nitrogen to the substrate in the process chamber;
• and
• a controller configured to be capable of controlling the first gas supply system, the second gas supply system, the third gas supply system, and the fourth gas supply system to perform a process including:
• forming the film, which contains silicon, the predetermined element, and nitrogen, on the substrate in the process chamber by performing a cycle a predetermined number of times, the cycle including:
• (a) forming a first layer by supplying the first gas to the substrate;
• (b) forming a second layer by supplying the second gas to the substrate;
• (c) supplying the third gas to the substrate;
• and
• (d) modifying the first layer and the second layer by supplying the fourth gas to the substrate,
• wherein in the cycle, (a) to (d) are performed in an order of:
• (a), (c), (b), and (d);
• (c), (a), (b), and (d);
• or (c), (a), (c), (b), and (d).

A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus that performs a film-forming process on a substrate to perform a process, in a process container included in the substrate processing apparatus, comprising:

• forming a film containing silicon, a predetermined element, and nitrogen on the substrate by performing a cycle a predetermined number of times, the cycle including:
• (a) forming a first layer by supplying a first gas which contains silicon, does not contain a Si-Si bond, and does not contain nitrogen, to the substrate;
• (b) forming a second layer by supplying a second gas, which is a chlorosilane gas containing a Si-Si bond, to the substrate;
• (c) supplying a third gas containing the predetermined element to the substrate, the predetermined element is capable of forming defects in the film;
• and
• (d) modifying the first layer and the second layer by supplying a fourth gas containing nitrogen to the substrate,
• wherein in the cycle, (a) to (d) are performed in an order of:
• (a), (c), (b), and (d);
• (c), (a), (b), and (d);
• or (c), (a), (c), (b), and (d).