H10P 14/6902
Composed of carbon
Official title: {composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon}
H10P14/6902 (Composed of carbon) appears on 709 US grants and 857 published applications in this corpus.
Search patents in H10P- Granted patents
- 709
- Published applications
- 857
- Assignees
- 209
- Inventors
- 1,770
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 3 | 0 |
| 1994 | 2 | 0 |
| 1995 | 1 | 0 |
| 1996 | 2 | 0 |
| 1997 | 4 | 0 |
| 1998 | 5 | 0 |
| 1999 | 7 | 0 |
| 2000 | 10 | 0 |
| 2001 | 10 | 7 |
| 2002 | 20 | 14 |
| 2003 | 10 | 9 |
| 2004 | 10 | 9 |
| 2005 | 10 | 27 |
| 2006 | 13 | 36 |
| 2007 | 12 | 17 |
| 2008 | 15 | 26 |
| 2009 | 15 | 23 |
| 2010 | 22 | 23 |
| 2011 | 19 | 19 |
| 2012 | 21 | 19 |
| 2013 | 24 | 16 |
| 2014 | 22 | 34 |
| 2015 | 16 | 33 |
| 2016 | 37 | 50 |
| 2017 | 49 | 56 |
| 2018 | 43 | 47 |
| 2019 | 37 | 41 |
| 2020 | 41 | 59 |
| 2021 | 45 | 49 |
| 2022 | 36 | 62 |
| 2023 | 38 | 62 |
| 2024 | 45 | 45 |
| 2025 | 41 | 51 |
| 2026 | 18 | 23 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- High selectivity, low stress, and low hydrogen carbon hardmasks in low-pressure conditions with wide gap electrode spacing15 Sep 2026US 12,735,785 B2Lam Research Corporation
- Film forming method and film forming apparatus8 Sep 2026US 12,733,415 B2Tokyo Electron Limited
- Substrate processing method and substrate processing apparatus25 Aug 2026US 12,721,058 B2Tokyo Electron Limited
- Semiconductor manufacturing facility and method of operating the same14 Jul 2026US 12,683,132 B2Lot Ces Co., Ltd.
- Method to reduce line edge roughness for EUV photoresist pattern9 Jun 2026US 12,650,648 B2APPLIED Materials.Inc.
- Method of forming protective film on outer circumferential portion including bevel portion of substrate8 Oct 2026US 2026/0311973 A1Ebara Corporation
- In situ nucleation of diamond for thermal conductive applications8 Oct 2026US 2026/0314280 A1APPLIED Materials.Inc.
- Semiconductor device manufacturing method and semiconductor device manufacturing system8 Oct 2026US 2026/0314387 A1Tokyo Electron Limited
- Anisotropic thermal etching of sio224 Sep 2026US 2026/0293554 A1Lam Research Corporation
- Semiconductor manufacturing facility and method of operating the same17 Sep 2026US 2026/0279744 A1Lot Ces Co., Ltd.
Most cited
By later US patents
- Method for depositing an amorphous carbon layer1,124US 6,573,030 B1APPLIED Materials.Inc. · 2003
- Low temperature plasma deposition process for carbon layer deposition545US 7,312,162 B2APPLIED Materials.Inc. · 2007
- Pulsed PECVD method for modulating hydrogen content in hard mask545US 7,381,644 B1Novellus Systems, Inc. · 2008
- Method of forming highly conformal amorphous carbon layer525US 7,842,622 B1ASM Japan K .K. · 2010
- Method of forming a high transparent carbon film524US 7,632,549 B2ASM Japan K .K. · 2009