Film forming method and film forming apparatus
AssigneesTokyo Electron Limited, University of Yamanashi
InventorsTakashi Fuse, Yusuke Kubota, Shuji Azumo, Tetsuya Sato
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Abstract
A film forming method selectively performs film formation. The film forming method includes a cooling operation and a film forming operation. The cooling operation includes cooling a substrate to a temperature at which molecules of a c-C4F8 gas and a SF6 gas condense on a surface of the substrate, the substrate having a metal film and a first insulating film exposed on the surface and being supported inside a chamber. The film forming operation includes forming a carbon-containing film on the metal film by supplying a processing gas including the c-C4F8 gas and the SF6 gas into the chamber while exciting the surface of the substrate.
Claims6
A film forming method of selectively performing film formation, the film forming method comprising:
- a cooling operation of cooling a substrate to a temperature at which molecules of a c-C4F8 gas and a SF6 gas condense on a surface of the substrate, the substrate having a metal film and a first insulating film which are exposed on the surface and being supported inside a chamber;
- and
- a film forming operation of forming a carbon-containing film on the metal film by supplying a processing gas including the c-C4F8 gas and the SF6 gas into the chamber while exciting the surface of the substrate.
A film forming apparatus comprising:
- a chamber in which a stage is provided to support a substrate with a metal film and an insulating film exposed on a surface of the substrate;
- a cooler configured to cool the substrate supported on the stage to a temperature at which molecules of a c-C4F8 gas and a SF6 gas condense on the surface of the substrate;
- a supplier configured to supply a processing gas including the c-C4F8 gas and the SF6 gas into the chamber;
- an excitation mechanism configured to excite the surface of the substrate;
- and
- a controller configured to perform control to form a carbon-containing film on the metal film by supplying the processing gas from the supplier into the chamber while exciting the surface of the substrate by the excitation mechanism.
Dependencies are inferred from the claim text.