Substrate processing method and substrate processing apparatus

A substrate processing method comprising:

• a carry-in step of carrying a substrate having a silicon-containing film on a surface of the substrate into a processing container;
• a first step of forming an adsorption layer by supplying an oxygen-containing gas into the processing container and causing the oxygen-containing gas to be adsorbed on a surface of the silicon-containing film without oxidizing the surface of the silicon-containing film;
• a second step of forming a silicon oxide layer by supplying an argon-containing gas into the processing container and causing the adsorption layer and the surface of the silicon-containing film to react with each other with plasma of the argon-containing gas;
• and
• a third step of forming a graphene film on the silicon oxide layer by supplying a carbon-containing gas into the processing container with plasma of the carbon-containing gas,
• wherein the first step is performed in a state in which plasma generation is stopped, and a substrate support pin of a stage is raised and the carried-in substrate is held at a first position, and
• the second step and the third step are executed in a state in which the substrate support pin is lowered and the substrate is held at a second position.